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NVMD3P03R2G PDF预览

NVMD3P03R2G

更新时间： 2024-11-24 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 小信号场效应晶体管
页数 文件大小 规格书
6页 147K
描述
双 P 沟道，功率 MOSFET，-30V，-3.05A，85mΩ

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中文翻译

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NVMD3P03R2G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：,针数：8
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：12 weeks风险等级：1.74
JESD-609代码：e3湿度敏感等级：1
端子面层：Tin (Sn)

NVMD3P03R2G 数据手册

 浏览型号NVMD3P03R2G的Datasheet PDF文件第2页浏览型号NVMD3P03R2G的Datasheet PDF文件第3页浏览型号NVMD3P03R2G的Datasheet PDF文件第4页浏览型号NVMD3P03R2G的Datasheet PDF文件第5页浏览型号NVMD3P03R2G的Datasheet PDF文件第6页 
NTMD3P03R2  
Power MOSFET  
−3.05 Amps, −30 Volts  
Dual P−Channel SOIC−8  
Features  
• High Efficiency Components in a Dual SOIC−8 Package  
http://onsemi.com  
• High Density Power MOSFET with Low R  
DS(on)  
• Miniature SOIC−8 Surface Mount Package − Saves Board Space  
• Diode Exhibits High Speed with Soft Recovery  
V
R
Typ  
I Max  
D
• I  
Specified at Elevated Temperature  
• Avalanche Energy Specified  
DSS  
DS(ON)  
DSS  
−30 V  
85 mW @ −10 V  
−3.05 A  
• Mounting Information for the SOIC−8 Package is Provided  
• Pb−Free Package is Available  
Applications  
P−Channel  
• DC−DC Converters  
D
• Low Voltage Motor Control  
• Power Management in Portable and Battery−Powered Products, i.e.:  
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
G
Rating  
Symbol  
Value  
Unit  
Drain−to−Source Voltage  
V
−30  
V
V
S
DSS  
Gate−to−Source Voltage − Continuous  
V
20  
GS  
MARKING DIAGRAM*  
AND PIN ASSIGNMENT  
Thermal Resistance −  
Junction−to−Ambient (Note 1)  
R
P
171  
0.73  
−2.34  
−1.87  
−8.0  
°C/W  
W
q
JA  
8
Total Power Dissipation @ T = 25°C  
A
D
D
D
D1 D1 D2 D2  
8
1
Continuous Drain Current @ 25°C  
Continuous Drain Current @ 70°C  
Pulsed Drain Current (Note 4)  
I
I
A
A
SOIC−8  
I
A
DM  
SUFFIX NB  
CASE 751  
STYLE 11  
ED3P03  
AYWW G  
G
Thermal Resistance −  
Junction−to−Ambient (Note 2)  
R
P
100  
1.25  
−3.05  
−2.44  
−12  
°C/W  
W
q
JA  
Total Power Dissipation @ T = 25°C  
A
D
D
D
1
Continuous Drain Current @ 25°C  
Continuous Drain Current @ 70°C  
Pulsed Drain Current (Note 4)  
I
I
A
S1 G1 S2 G2  
A
I
A
DM  
ED3P03= Specific Device Code  
Thermal Resistance −  
A
Y
= Assembly Location  
= Year  
Junction−to−Ambient (Note 3)  
R
P
I
62.5  
2.0  
−3.86  
−3.1  
−15  
°C/W  
W
q
JA  
Total Power Dissipation @ T = 25°C  
A
D
D
D
Continuous Drain Current @ 25°C  
Continuous Drain Current @ 70°C  
Pulsed Drain Current (Note 4)  
A
WW  
G
= Work Week  
= Pb−Free Package  
I
A
A
I
DM  
(Note: Microdot may be in either location)  
Operating and Storage  
Temperature Range  
T , T  
J
−55 to  
+150  
°C  
stg  
*For additional marking information, refer to  
Application Note AND8002/D.  
Single Pulse Drain−to−Source Avalanche  
E
AS  
140  
mJ  
Energy − Starting T = 25°C  
J
ORDERING INFORMATION  
(V = −30 Vdc, V = −4.5 Vdc, Peak I  
L
DD  
GS  
= −7.5 Apk, L = 5 mH, R = 25 W)  
G
†
Device  
Package  
Shipping  
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
NTMD3P03R2  
SOIC−8 2500/Tape & Reel  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
NTMD3P03R2G  
SOIC−8 2500/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D  
1. Minimum FR−4 or G−10 PCB, t = Steady State.  
2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick  
single sided), t = steady state.  
3. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick  
single sided), t ≤ 10 seconds.  
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 2  
NTMD3P03R2/D  
123456

中文翻译

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NVMD3P03R2G 替代型号

型号 品牌 替代类型 描述 数据表
NTMD3P03R2G ONSEMI

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 Power MOSFET -3.05 Amps, -30 Volts

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