Datasheet > NTTFS4951N

NTTFS4951N

更新时间： 2024-11-19 01:14:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	122K
描述
Single NâChannel Power MOSFET

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中文翻译

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数据手册

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NTTFS4951N 数据手册

NTTFS4951N

Power MOSFET

30 V, 46 A, Single N−Channel, m8FL

Features

• Optimized for Portable Applications with 5 V Gate Drive

• Low R

to Minimize Conduction Losses

DS(on)

http://onsemi.com

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAX

I MAX

(BR)DSS

DS(on)

6.2 mW @ 10 V

9.0 mW @ 4.5 V

30 V

46 A

Applications

• DC−DC Converters

• Power Load Switch

• Notebook Battery Management

N−Channel MOSFET

D (5−8)

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

G (4)

Gate−to−Source Voltage

Continuous Drain

T = 25°C

13.5

9.7

Current R

(Note 1)

S (1,2,3)

T = 85°C

Power Dissipation R

(Note 1)

T = 25°C

2.19

MARKING DIAGRAM

Continuous Drain

T = 25°C

Current R

(Note 1)

≤ 10 s

T = 85°C

13.7

4.42

4951

AYWWG

WDFN8

(m8FL)

CASE 511AB

Power Dissipation

≤ 10 s (Note 1)

T = 25°C

Steady

State

Continuous Drain

Current R (Note 2)

T = 25°C

8.3

6.0

4951

= Specific Device Code

= Assembly Location

= Year

T = 85°C

Power Dissipation

(Note 2)

T = 25°C

0.84

= Work Week

= Pb−Free Package

Continuous Drain

Current R (Note 1)

= 25°C

= 85°C

= 25°C

(Note: Microdot may be in either location)

Power Dissipation

(Note 1)

25.5

ORDERING INFORMATION

Pulsed Drain Current

T = 25°C, t = 10 ms

140

†

Device

Package

Shipping

Operating Junction and Storage Temperature

T ,

stg

−55 to

+150

°C

NTTFS4951NTAG

WDFN8 1500/Tape & Reel

(Pb−Free)

Source Current (Body Diode)

6.0

Drain to Source dV/dt

dV/dt

V/ns

NTTFS4951NTWG WDFN8 5000/Tape & Reel

(Pb−Free)

Single Pulse Drain−to−Source Avalanche Energy

(T = 25°C, V = 50 V, V = 10 V,

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

I = 29 A , L = 0.1 mH, R = 25 W)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

Publication Order Number:

January, 2014 − Rev. 1

NTTFS4951N/D

12 3 4 5 6 7

中文翻译

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与NTTFS4951N相关器件

型号	品牌	获取价格	描述	数据表
NTTFS4951NTAG	ONSEMI	获取价格	Single NâChannel Power MOSFET
NTTFS4951NTWG	ONSEMI	获取价格	Single NâChannel Power MOSFET
NTTFS4965NF	ONSEMI	获取价格	Power MOSFET
NTTFS4965NFTAG	ONSEMI	获取价格	Power MOSFET
NTTFS4965NFTWG	ONSEMI	获取价格	Power MOSFET
NTTFS4985NF	ONSEMI	获取价格	Power MOSFET 30 V, 64 A, Single NâChannel,
NTTFS4985NFTAG	ONSEMI	获取价格	Power MOSFET 30 V, 64 A, Single NâChannel,
NTTFS4985NFTWG	ONSEMI	获取价格	Power MOSFET 30 V, 64 A, Single NâChannel,
NTTFS4C02NTAG	ONSEMI	获取价格	单 N 沟道功率 MOSFET 30V，170A，2.25mΩ
NTTFS4C05N	ONSEMI	获取价格	Power MOSFET 30 V, 75 A, Single NâChannel,8

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