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NTTFS4945N

更新时间： 2024-11-18 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 133K
描述
Power MOSFET 30 V, 34 A, Single N−Channel, μ8FL

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NTTFS4945N 数据手册

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NTTFS4945N  
Power MOSFET  
30 V, 34 A, Single N−Channel, m8FL  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
http://onsemi.com  
V
R
DS(on)  
MAX  
I MAX  
D
(BR)DSS  
9.0 mW @ 10 V  
13 mW @ 4.5 V  
Applications  
30 V  
34 A  
• Power Load Switch  
• Notebook Battery Management  
• Motor Control  
N−Channel MOSFET  
D (5−8)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Symbol Value Unit  
V
DSS  
30  
20  
V
V
A
Gate−to−Source Voltage  
V
GS  
G (4)  
Continuous Drain  
I
D
T = 25°C  
11.2  
8.0  
A
Current R  
(Note 1)  
q
JA  
T = 85°C  
A
S (1,2,3)  
Power Dissipation R  
(Note 1)  
T = 25°C  
P
2.16  
W
A
q
JA  
A
D
Continuous Drain  
I
D
MARKING DIAGRAM  
T = 25°C  
A
15.7  
11.3  
4.30  
Current R  
(Note 1)  
≤ 10 s  
q
JA  
1
T = 85°C  
A
1
S
S
S
G
D
D
D
D
4945  
AYWWG  
G
WDFN8  
(m8FL)  
CASE 511AB  
Power Dissipation  
≤ 10 s (Note 1)  
T = 25°C  
A
P
I
W
A
D
D
D
R
q
JA  
Steady  
State  
Continuous Drain  
Current R (Note 2)  
T = 25°C  
A
7.1  
5.1  
D
q
JA  
T = 85°C  
A
4945  
A
Y
WW  
G
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
I
0.89  
W
A
R
q
JA  
Continuous Drain  
Current R (Note 1)  
T
T
T
= 25°C  
= 85°C  
= 25°C  
34  
24.4  
20  
D
C
C
C
q
JC  
(Note: Microdot may be in either location)  
Power Dissipation  
(Note 1)  
P
W
R
q
JC  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
102  
65  
A
A
A
p
DM  
I
DmaxPkg  
ORDERING INFORMATION  
Current Limited by Pkg.  
T = 25°C  
A
†
Device  
Package  
Shipping  
Operating Junction and Storage Temperature  
T ,  
T
−55 to  
+150  
°C  
J
stg  
NTTFS4945NTAG  
WDFN8 1500/Tape & Reel  
(Pb−Free)  
Source Current (Body Diode)  
I
20  
6.0  
A
S
NTTFS4945NTWG WDFN8 5000/Tape & Reel  
Drain to Source DV/DT  
dV/dt  
V/ns  
mJ  
(Pb−Free)  
Single Pulse Drain−to−Source Avalanche Energy  
E
AS  
26.5  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
(T = 25°C, V = 50 V, V = 10 V,  
J
DD  
GS  
I = 23 A , L = 0.1 mH, R = 25 W)  
L
pk  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
October, 2009 − Rev. 1  
NTTFS4945N/D  
 
1234567

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