Datasheet > NTF3055L108

NTF3055L108

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	78K
描述
Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223

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NTF3055L108 数据手册

NTF3055L108

= 0 V

T = 25°C

1000

800

iss

rss

600

400

200

iss

oss

= 3 A

rss

T = 25°C

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE

(VOLTS)

Q , TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

1000

100

3.2

2.8

2.4

= 30 V

= 3 A

= 5 V

= 0 V

T = 25°C

1.6

1.2

0.8

0.4

d(off)

d(on)

R , GATE RESISTANCE (W)

100

0.54 0.58 0.62 0.66 0.7 0.74 0.78 0.82 0.86 0.9

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

100

= 15 V

= 7 A

SINGLE PULSE

= 25°C

10 ms

1 ms

LIMIT

THERMAL LIMIT

PACKAGE LIMIT

0.1

100 ms

DS(on)

0.01

0.1

100

125

150

175

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

T , STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

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