Datasheet > NTF2955T1G

NTF2955T1G

更新时间： 2024-11-24 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	412K
描述
种类:P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C时）:-7A;Vgs(th)(V):±20

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数据手册

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NTF2955T1G 数据手册

NTF2955

UMW

-60V P-Channel MOSFET

Features

V_DS(V) = -60V

•

I_D= -7A (V_GS= -10V)

I_D= -6A (V_GS= -4.5V)

R_DS(ON)

< 55mΩ (V_GS= -10V)

< 65mΩ (V_GS= -4.5V)

•

R_DS(ON)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

- 60

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

- 7.0^a

T_C= 25 °C

_C= 70 °C

_A= 25 °C

- 5.2

Continuous Drain Current (T_J= 150 °C)

I_D

- 4.8^b

- 4.1^b

T_A= 70 °C

I_DM

I_AS

Pulsed Drain Current

- 25

Avalanche Current Pulse

Single Pulse Avalanche Energy

- 4.5

10.1

L = 0.1 mH

E_AS

6.9^a

3.5^b

_C= 25 °C

_A= 25 °C

I_S

Continuous Source-Drain Diode Current

10.4^a

6.6^a

2.1^b

1.1^b

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^b

Symbol

Typical

Maximum

Unit

R_thJA

Steady State

°C/W

R_thJC

Maximum Junction-to-Case

0.98

1.2

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

中文翻译

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