Datasheet > NTF3055-100

NTF3055-100

更新时间： 2024-11-23 10:30:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	138K
描述
Power MOSFET 3.0 Amps 60 Volts N−Channel

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中文翻译

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NTF3055-100 数据手册

NTF3055−100

Preferred Device

Power MOSFET

3.0 Amps, 60 Volts

N−Channel SOT−223

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

http://onsemi.com

3.0 A, 60 V

Features

R_DS(on)= 110 mW

• Pb−Free Packages are Available

N−Channel

Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING

DIAGRAM

& PIN

Rating

Drain−to−Source Voltage

Symbol Value

Unit

Vdc

DSS

ASSIGNMENT

Drain−to−Gate Voltage (R = 10 MW)

DGR

Drain

Gate−to−Source Voltage

− Continuous

SOT−223

CASE 318E

STYLE 3

Vdc

Vpk

AWW

− Non−repetitive (t ≤ 10 ms)

3055 G

Drain Current

− Continuous @ T = 25°C

3.0

1.4

9.0

Adc

Apk

− Continuous @ T = 100°C

− Single Pulse (t ≤ 10 ms)

Gate Drain Source

Total Power Dissipation @ T = 25°C (Note 1)

2.1

1.3

= Assembly Location

= Work Week

= Specific Device Code

= Pb−Free Package

Total Power Dissipation @ T = 25°C (Note 2)

3055

0.014 W/°C

Derate above 25°C

Operating and Storage Temperature Range

T , T

−55

to 175

°C

stg

(Note: Microdot may be in either location)

Single Pulse Drain−to−Source Avalanche

ORDERING INFORMATION

Energy − Starting T = 25°C

(V = 25 Vdc, V = 10 Vdc,

†

Device

Package

Shipping

I (pk) = 7.0 Apk, L = 3.0 mH, V = 60 Vdc)

NTF3055−100T1

SOT−223 1000/Tape & Reel

Thermal Resistance

°C/W

°C

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

72.3

114

1000/Tape & Reel

SOT−223

(Pb−Free)

NTF3055−100T1G

Maximum Lead Temperature for Soldering

260

NTF3055−100T3

SOT−223 4000/Tape & Reel

Purposes, 1/8″ from case for 10 seconds

NTF3055−100T3G SOT−223 4000/Tape & Reel

(Pb−Free)

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

NTF3055−100T3LF SOT−223 4000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.

(Cu. Area 1.127 sq in).

2. When surface mounted to an FR4 board using minimum recommended pad

size, 2−2.4 oz. (Cu. Area 0.272 sq in).

Preferred devices are recommended choices for future use

and best overall value.

Publication Order Number:

February, 2006 − Rev. 3

NTF3055−100/D

12 3 4 5 6

中文翻译

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与NTF3055-100相关器件

型号	品牌	获取价格	描述	数据表
NTF3055-100T1	ONSEMI	获取价格	Power MOSFET 3.0 Amps 60 Volts N−Channel
NTF3055-100T1G	ONSEMI	获取价格	Power MOSFET 3.0 Amps, 60 Volts
NTF3055-100T3	ONSEMI	获取价格	Power MOSFET 3.0 Amps 60 Volts N−Channel
NTF3055-100T3G	ONSEMI	获取价格	Power MOSFET 3.0 Amps 60 Volts N−Channel
NTF3055-100T3LF	ONSEMI	获取价格	Power MOSFET 3.0 Amps 60 Volts N−Channel
NTF3055-160	ONSEMI	获取价格	Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223
NTF3055-160T1	ONSEMI	获取价格	Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223
NTF3055-160T3	ONSEMI	获取价格	Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223
NTF3055-160T3LF	ONSEMI	获取价格	Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223
NTF3055L108	ONSEMI	获取价格	Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223

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