MMBT5087L
Low Noise Transistor
PNP Silicon
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
www.onsemi.com
COLLECTOR
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V
V
V
−50
Vdc
CEO
CBO
EBO
Collector−Base Voltage
Emitter−Base Voltage
−50
−3.0
−50
Vdc
Vdc
3
SOT−23 (TO−236)
CASE 318
STYLE 6
Collector Current − Continuous
I
C
mAdc
1
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P
D
(Note 1) T = 25°C
225
1.8
mW
mW/°C
MARKING DIAGRAM
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
R
556
°C/W
q
JA
2Q M G
Total Device Dissipation Alumina
P
D
G
Substrate, (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
1
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
2Q = Device Code
M
= Date Code*
T , T
J
−55 to +150
stg
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT5087LT1G,
NSVMMBT5087LT1G (Pb−Free)
SOT−23
3,000 / Tape &
Reel
MMBT5087LT3G,
NSVMMBT5087LT3G (Pb−Free)
SOT−23 10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 6
MMBT5087LT1/D