5秒后页面跳转
NSVMMBT5087LT3G PDF预览

NSVMMBT5087LT3G

更新时间: 2024-12-01 01:18:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 234K
描述
Low Noise Transistor

NSVMMBT5087LT3G 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:5 weeks风险等级:5.72
JESD-609代码:e3湿度敏感等级:1
端子面层:Tin (Sn)Base Number Matches:1

NSVMMBT5087LT3G 数据手册

 浏览型号NSVMMBT5087LT3G的Datasheet PDF文件第2页浏览型号NSVMMBT5087LT3G的Datasheet PDF文件第3页浏览型号NSVMMBT5087LT3G的Datasheet PDF文件第4页浏览型号NSVMMBT5087LT3G的Datasheet PDF文件第5页浏览型号NSVMMBT5087LT3G的Datasheet PDF文件第6页浏览型号NSVMMBT5087LT3G的Datasheet PDF文件第7页 
MMBT5087L  
Low Noise Transistor  
PNP Silicon  
Features  
NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
www.onsemi.com  
COLLECTOR  
3
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
1
BASE  
MAXIMUM RATINGS  
2
EMITTER  
Rating  
Symbol  
Value  
Unit  
CollectorEmitter Voltage  
V
V
V
−50  
Vdc  
CEO  
CBO  
EBO  
CollectorBase Voltage  
EmitterBase Voltage  
−50  
−3.0  
−50  
Vdc  
Vdc  
3
SOT−23 (TO−236)  
CASE 318  
STYLE 6  
Collector Current − Continuous  
I
C
mAdc  
1
2
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR−5 Board,  
P
D
(Note 1) T = 25°C  
225  
1.8  
mW  
mW/°C  
MARKING DIAGRAM  
A
Derate above 25°C  
Thermal Resistance, Junction−to−Ambient  
R
556  
°C/W  
q
JA  
2Q M G  
Total Device Dissipation Alumina  
P
D
G
Substrate, (Note 2) T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derate above 25°C  
1
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
2Q = Device Code  
M
= Date Code*  
T , T  
J
−55 to +150  
stg  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. FR−5 = 1.0 x 0.75 x 0.062 in.  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBT5087LT1G,  
NSVMMBT5087LT1G (Pb−Free)  
SOT−23  
3,000 / Tape &  
Reel  
MMBT5087LT3G,  
NSVMMBT5087LT3G (Pb−Free)  
SOT−23 10,000 / Tape &  
Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 1994  
1
Publication Order Number:  
October, 2016 − Rev. 6  
MMBT5087LT1/D  
 

与NSVMMBT5087LT3G相关器件

型号 品牌 获取价格 描述 数据表
NSVMMBT5088LT3G ONSEMI

获取价格

NPN 双极晶体管
NSVMMBT5401LT3G ONSEMI

获取价格

高电压 PNP 双极晶体管
NSVMMBT5401M3T5G ONSEMI

获取价格

150 V,60 mA,低饱和压,PNP 晶体管,SOT-723
NSVMMBT5401WT1G ONSEMI

获取价格

高电压 PNP 双极晶体管
NSVMMBT5550LT1G ONSEMI

获取价格

高电压 NPN 双极晶体管
NSVMMBT5551M3T5G ONSEMI

获取价格

高电压 NPN 双极晶体管
NSVMMBT589LT1G ONSEMI

获取价格

30 V,1.0 A,高电流,PNP,低饱和压,双极晶体管
NSVMMBT6429LT1G ONSEMI

获取价格

NPN 双极晶体管
NSVMMBT6517LT1G ONSEMI

获取价格

高压 NPN 双极晶体管
NSVMMBT6520L ONSEMI

获取价格

High Voltage Transistor