Datasheet > 晶体管 > 小信号双极晶体管> NSVB1706DMW5T1G

NSVB1706DMW5T1G

更新时间： 2024-11-05 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		小信号双极晶体管
页数	文件大小	规格书
3页	50K
描述
Dual NPN Bipolar Digital Transistor (BRT)

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中文翻译

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数据手册

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NSVB1706DMW5T1G 数据手册

NSB1706DMW5T1

Dual Bias Resistor

Transistor

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

http://onsemi.com

The BRT (Bias Resistor Transistor) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the NSB1706DMW5T1, two

BRT devices are housed in the SC−88A package which is ideal for low

power surface mount applications where board space is at a premium.

(5)

(4)

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Pb−Free Package is Available

(1)

(2)

(3)

MAXIMUM RATINGS

(T = 25°C unless otherwise noted, common for Q and Q )

Rating

Symbol

Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

CBO

CEO

Vdc

SC−88A

CASE 419A

STYLE 1

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

MARKING DIAGRAM

Total Device Dissipation

187 (Note 1)

256 (Note 2)

1.5 (Note 1) mW/°C

2.0 (Note 2)

T = 25°C

Derate above 25°C

U6 M G

Thermal Resistance, Junction-to-Ambient

670 (Note 1)

490 (Note 2)

°C/W

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

U6 = Device Marking

Total Device Dissipation

250 (Note 1)

385 (Note 2)

2.0 (Note 1) mW/°C

3.0 (Note 2)

= Date Code

T = 25°C

= Pb−Free Package

(Note: Microdot may be in either location)

Derate above 25°C

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Lead

Junction and Storage Temperature

493 (Note 1)

325 (Note 2)

°C/W

°C

ORDERING INFORMATION

†

188 (Note 1)

208 (Note 2)

Device

Package

Shipping

NSB1706DMW5T1

SC−88A 3000/Tape & Reel

T , T

−55 to +150

stg

NSB1706DMW5T1G SC−88A 3000/Tape & Reel

(Pb−Free)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

2. FR−4 @ 1.0 x 1.0 inch Pad.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

May, 2006 − Rev. 3

NSB1706DMW5T1/D

12 3

中文翻译

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