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NSVBASH16MX2WT5G PDF预览

NSVBASH16MX2WT5G

更新时间： 2023-09-03 20:29:46
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 196K
描述
High Voltage Switching Diode Series, +175°C

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NSVBASH16MX2WT5G 数据手册

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DATA SHEET  
www.onsemi.com  
High Voltage Switching  
Diodes  
1
CATHODE  
2
ANODE  
MARKING  
DIAGRAM  
BASH16MX2W  
The BASHxxMX2W Switching Diode is a spin−off of our popular  
SOT−23 three−leaded device. It is designed for switching applications  
and is housed in the X2DFNW2 (1.0x0.6mm) surface mount package.  
This device is ideal for low−power surface mount applications, where  
board space is at a premium.  
X2DFNW2  
CASE 711BG  
XXM  
XX = Specific Device Code  
= Date Code  
M
Features  
• 175°C T  
− Rated for High Temperature, Mission Critical  
J(max)  
Applications  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 4 of this data sheet.  
• Wettable Flank Package for optimal Automated Optical Inspection  
(AOI)  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
MAXIMUM RATINGS  
Rating  
Symbol  
V ,  
Value  
Unit  
Continuous Reverse Voltage  
BASH16  
Vdc  
R
V
100  
120  
200  
250  
RRM  
BASH19  
BASH20  
BASH21  
Continuous Forward Current  
I
200  
500  
mAdc  
mA  
F
Repetitive Peak Forward Current  
(Pulse Wave = 1 sec, Duty Cycle = 66%)  
I
FRM  
Non−Repetitive Peak Forward Current  
I
A
FSM  
(Square Wave, T = 25°C prior to surge)  
J
BASH16  
t = 1 ms  
t = 1 ms  
t = 1 s  
5.0  
2.0  
0.5  
9.0  
3.0  
1.7  
BASH19/20/21 t = 1 ms  
t = 1 ms  
t = 1 s  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR−5 Board  
A
P
D
T = 25°C (Note 1)  
300  
400  
mW  
Thermal Resistance Junction−to−Ambient  
(Note 1)  
R
°C/W  
q
JA  
Thermal Resistance Junction−to−Solder  
R
105  
°C/W  
°C  
q
JSP  
Point (Note 1)  
Junction and Storage Temperature Range  
T , T  
J
−55 to  
+175  
stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06″ thick single  
sided. Operating to steady state.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
May, 2023 − Rev. 2  
BASH16MX2W/D  
 
123456

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