Datasheet > 晶体管 > 小信号双极晶体管> NSVBC114EDXV6T1G

NSVBC114EDXV6T1G

更新时间： 2024-10-02 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		小信号双极晶体管数字晶体管
页数	文件大小	规格书
7页	121K
描述
双 NPN 双极数字晶体管 (BRT)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NSVBC114EDXV6T1G 数据手册

NSBC114EDP6T5G Series

Preferred Devices

Dual Digital Transistors

(BRT)

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

http://onsemi.com

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The digital transistor

contains a single transistor with a monolithic bias network consisting

of two resistors; a series base resistor and a base−emitter resistor. The

digital transistor eliminates these individual components by

integrating them into a single device. The use of a digital transistor can

reduce both system cost and board space. The device is housed in the

SOT−963 package which is designed for low power surface mount

applications.

NPN SILICON DIGITAL

TRANSISTORS

(3)

(2)

(1)

Features

• Simplifies Circuit Design

• Reduces Board Space

(4)

(5)

(6)

• Reduces Component Count

• The SOT−963 Package can be Soldered using Wave or Reflow.

• Available in 4 mm, 8000 Unit Tape & Reel

• These are Pb−Free Devices

MARKING

DIAGRAM

• These are Halide−Free Devices

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

SOT−963

CASE 527AD

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

CBO

CEO

= Specific Device Code

= Date Code

= Pb−Free Package

Vdc

100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

†

Device

NSBC114EDP6T5G

Package

Shipping

SOT−963

(Pb−Free)

8000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

DEVICE MARKING INFORMATION

See specific marking information in the device marking table

on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2008

Publication Order Number:

September, 2008 − Rev. 2

NSBC114EDP6/D

12 3 4 5 6 7

中文翻译

下载PDF

与NSVBC114EDXV6T1G相关器件

型号	品牌	获取价格	描述	数据表
NSVBC114EPDXV6T1G	ONSEMI	获取价格	互补双极数字晶体管 (BRT)
NSVBC114YDXV6T1G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors
NSVBC114YPDXV65G	ONSEMI	获取价格	Complementary Bipolar Digital Transistor (BRT)
NSVBC114YPDXV6T1G	ONSEMI	获取价格	Complementary Bipolar Digital Transistor (BRT)
NSVBC123JDXV6T1G	ONSEMI	获取价格	Dual NPN Bipolar Digital Transistor (BRT)
NSVBC123JDXV6T5G	ONSEMI	获取价格	Dual NPN Bipolar Digital Transistor (BRT)
NSVBC123JPDXV6T1G	ONSEMI	获取价格	Complementary Bipolar Digital Transistor (BRT)
NSVBC124EDXV6T1G	ONSEMI	获取价格	Dual NPN Bipolar Digital Transistor (BRT)
NSVBC124EPDXV6T1G	ONSEMI	获取价格	互补双极数字晶体管 (BRT)
NSVBC124XDXV6T1G	ONSEMI	获取价格	双 NPN 双极数字晶体管 (BRT)

与NSVBC114EDXV6T1G相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

36
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

30
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

28
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

39

产品中心

服务支持

精选活动

关于我们

帮助中心

NSVBC114EDXV6T1G

NSVBC114EDXV6T1G 数据手册

与NSVBC114EDXV6T1G相关器件

与NSVBC114EDXV6T1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NSVBC114EDXV6T1G

NSVBC114EDXV6T1G 数据手册

与NSVBC114EDXV6T1G相关器件

与NSVBC114EDXV6T1G相关文章

您还可以找

您在本页遇到什么问题？