NSVBC848CDW1T1G

更新时间： 2023-06-19 14:31:55

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管
页数	文件大小	规格书
6页	110K
描述
双 NPN 双极晶体管

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数据手册

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NSVBC848CDW1T1G 数据手册

BC846BDW1T1,

BC847BDW1T1,

BC848CDW1T1

Dual General Purpose

Transistors

http://onsemi.com

NPN Duals

(3)

(2)

(1)

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−363/SC−88 which is

designed for low power surface mount applications.

• Device Marking:

BC846BDW1T1 = 1B

BC847BDW1T1 = 1F

BC848CDW1T1 = 1L

(4)

(5)

(6)

Features

DIAGRAM

MARKING

• Pb−Free Package is Available

SOT−363

CASE 419B

STYLE 1

1xm

MAXIMUM RATINGS

Rating

Symbol BC846 BC847 BC848 Unit

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

CEO

CBO

EBO

1x = Specific Device Code

= B, F, L

m = Date Code

6.0

100

6.0

100

5.0

100

Collector Current −

Continuous

mAdc

ORDERING INFORMATION

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

†

Device

Package

SOT−363

Shipping

BC846BDW1T1

BC847BDW1T1

3000 Units/Reel

THERMAL CHARACTERISTICS

BC847BDW1T1G SOT−363

(Pb−Free)

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Per Device

380

250

BC848CDW1T1

SOT−363

3000 Units/Reel

FR−5 Board (Note 1)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

T = 25°C

Derate Above 25°C

3.0

mW/°C

°C/W

Thermal Resistance,

Junction−to−Ambient

328

Junction and Storage

Temperature Range

T , T

−55 to +150

°C

stg

1. FR−5 = 1.0 x 0.75 x 0.062 in

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

June, 2004 − Rev. 3

BC846BDW1T1/D

12 3 4 5 6

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