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NSVBC143ZPDXV6T1G PDF预览

NSVBC143ZPDXV6T1G

更新时间: 2024-11-29 01:18:23
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管晶体管
页数 文件大小 规格书
10页 101K
描述
Complementary Bias Resistor Transistors

NSVBC143ZPDXV6T1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SOT-563, 6 PINReach Compliance Code:compliant
Factory Lead Time:17 weeks风险等级:1.54
其他特性:BUILT IN BIAS RESISTOR RATIO IS 10最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-F6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.5 W参考标准:AEC-Q101
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
晶体管元件材料:SILICONVCEsat-Max:0.25 V
Base Number Matches:1

NSVBC143ZPDXV6T1G 数据手册

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MUN5333DW1,  
NSBC143ZPDXV6,  
NSBC143ZPDP6  
Complementary Bias  
Resistor Transistors  
R1 = 4.7 kW, R2 = 47 kW  
NPN and PNP Transistors with Monolithic  
Bias Resistor Network  
www.onsemi.com  
PIN CONNECTIONS  
(2)  
(3)  
(1)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base-emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
R
1
R
2
Q
1
Q
2
R
2
R
1
Features  
(4)  
(5)  
(6)  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
MARKING DIAGRAMS  
S and NSV Prefix for Automotive and Other Applications  
Requiring Unique Site and Control Change Requirements;  
AEC-Q101 Qualified and PPAP Capable*  
6
SOT−363  
CASE 419B  
33 M G  
G
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS  
Compliant  
1
MAXIMUM RATINGS  
(T = 25°C both polarities Q (PNP) & Q (NPN), unless otherwise noted)  
A
1
2
SOT−563  
CASE 463A  
1
33 M G  
G
Rating  
Symbol  
Max  
50  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
V
CBO  
V
CEO  
50  
Vdc  
Collector Current − Continuous  
Input Forward Voltage  
I
100  
30  
mAdc  
Vdc  
C
SOT−963  
CASE 527AD  
M G  
V
IN(fwd)  
G
1
Input Reverse Voltage  
V
5
Vdc  
IN(rev)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
33/Y  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb-Free Package  
ORDERING INFORMATION  
(Note: Microdot may be in either location)  
Device  
Package  
Shipping  
*Date Code orientation may vary depending up-  
on manufacturing location.  
MUN5333DW1T1G,  
SOT−363  
3,000/Tape & Reel  
NSVMUN5333DW1T1G*  
NSVMUN5333DW1T3G*  
SOT−363  
SOT−563  
10,000/Tape & Reel  
4,000/Tape & Reel  
NSBC143ZPDXV6T1G  
NSVBC143ZPDXV6T1G*  
NSVBC143ZPDXV6T5G*  
NSBC143ZPDP6T5G  
SOT−563  
SOT−963  
8,000/Tape & Reel  
8,000/Tape & Reel  
†For information on tape and reel specifications, including part orientation and  
tape sizes, please refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
September, 2016 − Rev. 4  
DTC143ZP/D  

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