BC846BDW1T1G,
SBC846BDW1T1G,
BC847BDW1T1G,
SBC847BDW1T1G Series,
NSVBC847BDW1T2G,
BC848CDW1T1G
http://onsemi.com
Dual General Purpose
Transistors
NPN Duals
SOT−363
CASE 419B
STYLE 1
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
(3)
(2)
(1)
Q
Features
Q
1
2
• S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
(4)
(5)
(6)
MARKING DIAGRAM
6
MAXIMUM RATINGS
1x MG
Rating
Symbol BC846 BC847 BC848 Unit
G
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
CEO
V
CBO
V
EBO
65
80
45
50
30
30
V
V
1
6.0
100
6.0
100
5.0
100
V
1x = Specific Device Code
= B, F, G, L
M = Date Code
Collector Current −
Continuous
I
C
mAdc
x
G
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation Per Device
P
D
FR−5 Board (Note 1)
380
250
3.0
mW
mW/°C
mW/°C
T = 25°C
A
Derate Above 25°C
Thermal Resistance,
Junction to Ambient
R
°C/W
q
JA
328
Junction and Storage Temperature
Range
T , T
−55 to +150
°C
J
stg
1. FR−5 = 1.0 x 0.75 x 0.062 in
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
September, 2012 − Rev. 9
BC846BDW1T1/D