Order this document
by BC856AWT1/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
3
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
1
Motorola Preferred Devices
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol BC856 BC857 BC858
Unit
V
3
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
V
V
V
–65
–80
–45
–50
–30
–30
CEO
CBO
EBO
1
V
2
–5.0
–100
–5.0
–100
–5.0
–100
V
CASE 419–02, STYLE 3
SOT–323/SC–70
I
C
mAdc
Symbol
Max
Unit
Total Device Dissipation FR–5 Board, (1)
= 25°C
P
D
150
mW
T
A
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R
833
°C/W
°C
JA
T , T
J stg
–55 to +150
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = –10 mA)
C
BC856 Series
BC857 Series
BC858 Series
V
–65
–45
–30
—
—
—
—
—
—
V
(BR)CEO
Collector–Emitter Breakdown Voltage
BC856 Series
BC857 Series
BC858 Series
V
–80
–50
–30
—
—
—
—
—
—
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I = –10 µA, V
C
= 0)
EB
Collector–Base Breakdown Voltage
(I = –10 A)
C
BC856 Series
BC857 Series
BC858 Series
V
V
–80
–50
–30
—
—
—
—
—
—
Emitter–Base Breakdown Voltage
(I = –1.0 A)
E
BC856 Series
BC857 Series
BC858 Series
–5.0
–5.0
–5.0
—
—
—
—
—
—
Collector Cutoff Current (V
Collector Cutoff Current (V
= –30 V)
= –30 V, T = 150°C)
I
—
—
—
—
–15
–4.0
nA
µA
CB
CB
CBO
A
1. FR–5 = 1.0 x 0.75 x 0.062 in
Thermal Clad is a registered trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1