Datasheet > 晶体管 > 小信号双极晶体管> NSVBCX17LT1G

NSVBCX17LT1G

更新时间： 2024-11-30 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		小信号双极晶体管
页数	文件大小	规格书
4页	125K
描述
PNP Bipolar Transistor

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NSVBCX17LT1G 数据手册

BCX18LT1G, PNP

BCX19LT1G, NPN

General Purpose

Transistors

Voltage and Current are Negative for

PNP Transistors

http://onsemi.com

PNP

NPN

Features

COLLECTOR

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

BCX19LT1

BCX18LT1

CEO

Vdc

Collector − Base Voltage

BCX19LT1

BCX18LT1

Vdc

CBO

SOT−23

CASE 318

STYLE 6

Emitter − Base Voltage

5.0

Vdc

EBO

Collector Current − Continuous

500

mAdc

MARKING DIAGRAM

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

225

xx M G

(Note 1), T = 25°C

Derate above 25°C

1.8

mW/°C

°C/W

Thermal Resistance,

Junction−to−Ambient

= T2 or U1

= Date Code*

= Pb−Free Package

556

Total Device Dissipation Alumina

Substrate, (Note 2) T = 25°C

300

2.4

mW/°C

(Note: Microdot may be in either location)

Derate above 25°C

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Thermal Resistance,

Junction−to−Ambient

417

°C/W

°C

Junction and Storage Temperature

T , T

−55 to +150

stg

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in 99.5% alumina.

Semiconductor Components Industries, LLC, 2009

Publication Order Number:

August, 2009 − Rev. 0

BCX18LT1/D

12 3 4

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