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NSVBSP19AT1G PDF预览

NSVBSP19AT1G

更新时间: 2024-11-30 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 小信号双极晶体管
页数 文件大小 规格书
4页 177K
描述
NPN 双极晶体管

NSVBSP19AT1G 技术参数

是否无铅: 不含铅生命周期:Obsolete
包装说明:,针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.82JESD-609代码:e3
湿度敏感等级:1端子面层:Tin (Sn)

NSVBSP19AT1G 数据手册

 浏览型号NSVBSP19AT1G的Datasheet PDF文件第2页浏览型号NSVBSP19AT1G的Datasheet PDF文件第3页浏览型号NSVBSP19AT1G的Datasheet PDF文件第4页 
BSP19AT1G  
NPN Silicon Expitaxial  
Transistor  
This family of NPN Silicon Epitaxial transistors is designed for use  
as a general purpose amplifier and in switching applications. The  
device is housed in the SOT-223 package which is designed for  
medium power surface mount applications.  
http://onsemi.com  
Features  
SOT--223 PACKAGE  
NPN SILICON HIGH VOLTAGE  
TRANSISTOR SURFACE MOUNT  
High Voltage: V(BR)CEO of 250 and 350 V  
The SOT-223 Package Can Be Soldered Using Wave or Reflow  
SOT-223 Package Ensures Level Mounting, Resulting in Improved  
Thermal Conduction, and Allows Visual Inspection of Soldered Joints  
The Formed Leads Absorb Thermal Stress During Soldering,  
Eliminating the Possibility of Damage to the Die  
PNP Complement is BSP16T1  
COLLECTOR 2,4  
BASE  
1
Moisture Sensitivity Level (MSL): 1  
ESD: Human Body Model (HBM) = 4 KV  
Machine Model (MM) = 400 V  
EMITTER 3  
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS  
Compliant  
MARKING  
DIAGRAM  
4
4
MAXIMUM RATINGS (T = 25C unless otherwise noted)  
C
Collector  
1
2
Rating  
Symbol  
Value  
350  
400  
5.0  
Unit  
Vdc  
3
Collector-Emitter Voltage (Open Base)  
Collector-Base Voltage (Open Emitter)  
Emitter-Base Voltage (Open Collector)  
Collector Current (DC)  
V
CEO  
V
CBO  
V
EBO  
CASE 318E  
TO-261AA  
STYLE 1  
AYW  
SP19A G  
G
Vdc  
Vdc  
1
3
I
100  
mAdc  
C
Base  
Emitter  
2
Collector  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
A
Y
W
= Assembly Location  
= Year  
Total Power Dissipation @ T = 25C  
P
0.8  
W
A
D
= Work Week  
(Note 1)  
Derate above 25C  
SP19A = Specific Device Code  
= Pb--Free Package  
(Note: Microdot may be in either location)  
6.4  
156  
mW/C  
C/W  
C  
G
Thermal Resistance, Junction--to--Ambient  
Junction and Storage Temperature Range  
R
θ
JA  
T
stg  
--65 to +150  
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum  
recommended footprint.  
Device  
Package  
Shipping  
BSP19AT1G  
SOT--223  
(Pb--Free)  
1000 / Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
September, 2010 -- Rev. 8  
BSP19AT1/D  

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