MBT2222ADW1,
NSVBT2222ADW1
General Purpose Transistor
NPN Silicon
http://onsemi.com
Features
• Moisture Sensitivity Level: 1
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
(3)
(2)
(1)
Q
Q
1
2
(4)
(5)
(6)
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
40
Unit
Vdc
V
CEO
CBO
V
75
Vdc
1
V
EBO
6.0
Vdc
SC−88/SC70−6/SOT−363
CASE 419B
Collector Current − Continuous
Electrostatic Discharge
I
C
600
mAdc
STYLE 1
ESD
HBM Class 2
MM Class B
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
6
Total Package Dissipation (Note 1),
T = 25°C
A
P
150
mW
°C/W
°C
D
1P M G
G
Thermal Resistance,
Junction−to−Ambient
R
q
833
JA
1
Junction and Storage Temperature
T , T
J
−55 to +150
1P
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
RecommendedOperating Conditions may affect device reliability.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
MBT2222ADW1T1G
SOT−363
3000 /
(Pb−Free) Tape & Reel
NSVBT2222ADW1T1G SOT−363 3000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
September, 2013 − Rev. 5
MBT2222ADW1T1/D