Datasheet > NSVBC114YPDXV65G

NSVBC114YPDXV65G

更新时间： 2024-11-29 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
34页	270K
描述
Complementary Bipolar Digital Transistor (BRT)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NSVBC114YPDXV65G 数据手册

MUN5311DW1T1G,

SMUN5311DW1T1G,

NSVMUN5311DW1T1GꢀSeries

Dual Bias Resistor

Transistors

http://onsemi.com

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

SOT−363

CASE 419B

STYLE 1

The Bias Resistor Transistor (BRT) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

(3)

(2)

(1)

integrating them into

single device. In the

MUN5311DW1T1G series, two complementary BRT devices are

housed in the SOT−363 package which is ideal for low power surface

mount applications where board space is at a premium.

(4)

(5)

(6)

Features

• Simplifies Circuit Design

• Reduces Board Space

MARKING DIAGRAM

• Reduces Component Count

• Available in 8 mm, 7 inch/3000 Unit Tape and Reel

xx M G

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

= Device Code

= Date Code*

= Pb−Free Package

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

(Note: Microdot may be in either location)

MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for

*Date Code orientation and/or position may

vary depending upon manufacturing location.

Q and Q , − minus sign for Q (PNP) omitted)

Rating

Symbol

Value

Unit

Vdc

ORDERING AND DEVICE MARKING

INFORMATION

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

CBO

CEO

Vdc

See detailed ordering, shipping, and specific marking

information in the table on page 2 of this data sheet.

100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

March, 2014 − Rev. 14

MUN5311DW1T1/D

12 3 4 5 6 7...34

中文翻译

下载PDF

与NSVBC114YPDXV65G相关器件

型号	品牌	获取价格	描述	数据表
NSVBC114YPDXV6T1G	ONSEMI	获取价格	Complementary Bipolar Digital Transistor (BRT)
NSVBC123JDXV6T1G	ONSEMI	获取价格	Dual NPN Bipolar Digital Transistor (BRT)
NSVBC123JDXV6T5G	ONSEMI	获取价格	Dual NPN Bipolar Digital Transistor (BRT)
NSVBC123JPDXV6T1G	ONSEMI	获取价格	Complementary Bipolar Digital Transistor (BRT)
NSVBC124EDXV6T1G	ONSEMI	获取价格	Dual NPN Bipolar Digital Transistor (BRT)
NSVBC124EPDXV6T1G	ONSEMI	获取价格	互补双极数字晶体管 (BRT)
NSVBC124XDXV6T1G	ONSEMI	获取价格	双 NPN 双极数字晶体管 (BRT)
NSVBC124XPDXV6T1G	ONSEMI	获取价格	Complemetary Bipolar Digital Transistor (BRT)
NSVBC143JPDXV6T5G	ONSEMI	获取价格	PNP BRT with R1/R2 = 2.2/47kΩ and NPN BRT wit
NSVBC143ZDXV6T1G	ONSEMI	获取价格	双 NPN 双极数字晶体管 (BRT)

与NSVBC114YPDXV65G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

48
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

66
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

62

产品中心

服务支持

精选活动

关于我们

帮助中心

NSVBC114YPDXV65G

NSVBC114YPDXV65G 数据手册

与NSVBC114YPDXV65G相关器件

与NSVBC114YPDXV65G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NSVBC114YPDXV65G

NSVBC114YPDXV65G 数据手册

与NSVBC114YPDXV65G相关器件

与NSVBC114YPDXV65G相关文章

您还可以找

您在本页遇到什么问题？