Datasheet > NSVBC124EPDXV6T1G

NSVBC124EPDXV6T1G

更新时间： 2024-11-29 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		数字晶体管
页数	文件大小	规格书
10页	105K
描述
互补双极数字晶体管 (BRT)

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中文翻译

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MUN5312DW1,

NSBC124EPDXV6,

NSBC124EPDP6

Complementary Bias

Resistor Transistors

www.onsemi.com

PIN CONNECTIONS

(2)

R1 = 22 kW, R2 = 22 kW

NPN and PNP Transistors with Monolithic

Bias Resistor Network

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base-emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

(3)

(1)

Features

• Simplifies Circuit Design

• Reduces Board Space

(4)

(5)

(6)

• Reduces Component Count

MARKING DIAGRAMS

• S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable*

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

SOT−363

CASE 419B

12 M G

Compliant

MAXIMUM RATINGS

(T = 25°C both polarities Q (PNP) & Q (NPN), unless otherwise noted)

Rating

Symbol

Max

Unit

Vdc

SOT−563

CASE 463A

12 M G

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

Vdc

Collector Current − Continuous

Input Forward Voltage

100

mAdc

Vdc

IN(fwd)

SOT−963

CASE 527AD

Input Reverse Voltage

Vdc

M G

IN(rev)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

12/R

Specific Device Code

Date Code*

Pb-Free Package

ORDERING INFORMATION

†

Device

Package

Shipping

MUN5312DW1T1G,

SMUN5312DW1T1G*

SOT−363

3,000 / Tape & Reel

(Note: Microdot may be in either location)

*Date Code orientation may vary depending up-

on manufacturing location.

NSVMUN5312DW1T3G*

SOT−363

10,000 / Tape & Reel

3,000 / Tape & Reel

MUN5312DW1T2G,

NSVMUN5312DW1T2G*

NSBC124EPDXV6T1G

NSBC124EPDXV6T5G

NSBC124EPDP6T5G

SOT−563

SOT−963

4,000 / Tape & Reel

8,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

June, 2015 − Rev. 3

DTC124EP/D

12 3 4 5 6 7...10

中文翻译

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与NSVBC124EPDXV6T1G相关器件

型号	品牌	获取价格	描述	数据表
NSVBC124XDXV6T1G	ONSEMI	获取价格	双 NPN 双极数字晶体管 (BRT)
NSVBC124XPDXV6T1G	ONSEMI	获取价格	Complemetary Bipolar Digital Transistor (BRT)
NSVBC143JPDXV6T5G	ONSEMI	获取价格	PNP BRT with R1/R2 = 2.2/47kΩ and NPN BRT wit
NSVBC143ZDXV6T1G	ONSEMI	获取价格	双 NPN 双极数字晶体管 (BRT)
NSVBC143ZPDXV6T1G	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSVBC143ZPDXV6T5G	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSVBC144EDXV6T1G	ONSEMI	获取价格	双 NPN 双极数字晶体管 (BRT)
NSVBC144EPDXV6T1G	ONSEMI	获取价格	互补双极数字晶体管 (BRT)
NSVBC817-16LT1G	ONSEMI	获取价格	NPN 双极晶体管
NSVBC817-40WT1G	ONSEMI	获取价格	45 V，0.5 A，通用 NPN 晶体管

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