BAWH56W, NSVBAWH56W
Dual Switching Diode,
Common Anode
Features
• 175°C T
− Rated for High Temperature, Mission Critical
J(MAX)
Applications
www.onsemi.com
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SC−70
CASE 419
STYLE 4
CATHODE
1
MAXIMUM RATINGS (TA = 25°C)
ANODE
3
Rating
Symbol
Max
70
Unit
V
2
Reverse Voltage
Forward Current
V
R
CATHODE
I
F
200
2.0
mA
A
Non−Repetitive Peak Surge Current
(surge applied at rated load conditions,
half wave, single pulse, 60 Hz)
I
FSM
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
CH M G
G
THERMAL CHARACTERISTICS (T = 25°C)
1
A
Characteristic
Symbol
Max
Unit
CH = Device Code
M
G
= Date Code*
= Pb−Free Package
Total Device Dissipation FR−5 Board
P
200
mW
D
(Note 1)
T = 25°C
A
(Note: Microdot may be in either location)
Derate above 25°C
1.1
mW/°C
°C/W
*Date Code orientation may vary depending
upon manufacturing location.
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
615
ꢀ
JA
Total Device Dissipation
P
300
mW
D
ORDERING INFORMATION
Alumina Substrate (Note 2) T = 25°C
A
Derate above 25°C
1.6
mW/°C
°C/W
†
Device
Package
Shipping
Thermal Resistance, Junction−to−Ambient
(Note 2)
R
417
ꢀ
JA
SC−70
(Pb−Free)
3,000 / Tape &
Reel
BAWH56WT1G
Junction and Storage Temperature
T , T
−55 to
+175
°C
J
stg
SC−70
(Pb−Free)
3,000 / Tape &
Reel
NSVBAWH56WT1G
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2018
Publication Order Number:
1
June, 2019 − Rev. 4
BAWH56W/D