NSVBAT54M3T5G

更新时间： 2024-09-30 11:01:31

品牌	Logo	应用领域
安森美 - ONSEMI		整流二极管
页数	文件大小	规格书
4页	113K
描述
肖特基势垒二极管

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NSVBAT54M3T5G 数据手册

BAT54M3T5G

Schottky Barrier Diode

This Schottky barrier diode is designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

The BAT54M3T5G device is a spin−off of our popular SOT−23

three−leaded device and is housed in the SOT−723 surface mount

package. This device is ideal for low−power surface mount

applications where board space is at a premium.

http://onsemi.com

30 V

SILICON HOT−CARRIER

DETECTOR AND SWITCHING

DIODE

Features

• Extremely Fast Switching Speed

• Low Forward Voltage − 0.35 Volts (Typ) @ I = 10 mAdc

• Reduces Board Space

• This is a Halide−Free Device

• This is a Pb−Free Device

CATHODE

ANODE

MAXIMUM RATINGS (T = 125°C unless otherwise noted)

MARKING

DIAGRAM

Rating

Reverse Voltage

Forward Power Dissipation

Symbol

Value

Unit

SOT−723

CASE 631AA

STYLE 2

AP M

@ T = 25°C

200

2.0

mW/°C

Derate above 25°C

Forward Current (DC)

Junction Temperature

Storage Temperature Range

200 Max

°C

AP = Specific Device Code

= Date Code

−55 to +125

−55 to +150

stg

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

†

Device

BAT54M3T5G

Package

Shipping

SOT−723 8000/Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2009

Publication Order Number:

January, 2009 − Rev. 0

BAT54M3/D

12 3 4

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