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NSVBAT54HT1G PDF预览

NSVBAT54HT1G

更新时间: 2024-11-04 12:05:07
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
4页 119K
描述
Schottky Barrier Diodes

NSVBAT54HT1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SOD-323, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70Factory Lead Time:1 week
风险等级:1.47应用:FAST RECOVERY
最小击穿电压:30 V配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.8 VJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.6 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.2 W参考标准:AEC-Q101
最大重复峰值反向电压:30 V最大反向电流:2 µA
最大反向恢复时间:0.005 µs反向测试电压:25 V
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

NSVBAT54HT1G 数据手册

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BAT54HT1G,  
NSVBAT54HT1G  
Schottky Barrier Diodes  
These Schottky barrier diodes are designed for high speed switching  
applications, circuit protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Miniature surface mount  
package is excellent for hand held and portable applications where  
space is limited.  
http://onsemi.com  
30 VOLT SILICON  
HOTCARRIER DETECTOR  
AND SWITCHING DIODES  
Features  
Extremely Fast Switching Speed  
Low Forward Voltage 0.35 V (Typ) @ I = 10 mAdc  
F
Device Marking: JV  
AEC Qualified and PPAP Capable  
NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant*  
SOD323  
CASE 477  
STYLE 1  
1
2
MAXIMUM RATINGS (T = 125C unless otherwise noted)  
J
CATHODE  
ANODE  
Rating  
Symbol Value  
30  
Unit  
Reverse Voltage  
V
V
R
MARKING DIAGRAM  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
JVM G  
G
2
1
THERMAL CHARACTERISTICS  
JV  
M
G
= Device Code  
= Date Code  
= PbFree Package  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board,  
P
D
(Note 1)  
(Note: Microdot may be in either location)  
T = 25C  
200  
1.57  
mW  
mW/C  
A
Derate above 25C  
ORDERING INFORMATION  
Forward Current (DC)  
I
200  
mA  
mA  
F
Max  
Device  
Package  
Shipping  
NonRepetitive Peak Forward Current,  
t < 10 msec  
p
I
FSM  
BAT54HT1G  
SOD323  
(PbFree)  
3,000 /  
Tape & Reel  
600  
300  
635  
Repetitive Peak Forward Current  
Pulse Wave = 1 sec, Duty Cycle = 66%  
I
mA  
FRM  
NSVBAT54HT1G  
SOD323  
(PbFree)  
3,000 /  
Tape & Reel  
Thermal Resistance  
JunctiontoAmbient  
R
C/W  
C  
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Junction and Storage Temperature Range  
T , T  
55  
to150  
J
stg  
1. FR4 Minimum Pad  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011 Rev. 6  
BAT54HT1/D  

NSVBAT54HT1G 替代型号

型号 品牌 替代类型 描述 数据表
BAT54WS-E3-08 VISHAY

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