BAV70DXV6T1,
BAV70DXV6T5
Preferred Device
Monolithic Dual Switching
Diode Common Cathode
Features
http://onsemi.com
• These are Pb−Free Devices
ANODE
1
6
MAXIMUM RATINGS (EACH DIODE)
CATHODE
2
ANODE
Rating
Symbol
Value
70
Unit
Vdc
5
Reverse Voltage
Forward Current
V
R
ANODE
3
I
200
500
mAdc
mAdc
F
CATHODE
4
Peak Forward Surge Current
I
FM(surge)
ANODE
BAV70DXV6T1
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
SOT−563
CASE 463A
PLASTIC
Total Device Dissipation, T = 25°C
P
357
(Note 1)
2.9
mW
A
D
1
Derate above 25°C
mW/°C
°C/W
(Note 1)
Thermal Resistance, Junction-to-Ambient
R
ꢀ
JA
350
(Note 1)
MARKING DIAGRAM
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
A4 M G
G
Total Device Dissipation, T = 25°C
P
500
(Note 1)
4.0
mW
A
D
1
Derate above 25°C
mW/°C
°C/W
°C
A4 = Specific Device Code
(Note 1)
M
G
= Month Code
= Pb−Free Package
(Note: Microdot may be in either location)
Thermal Resistance, Junction-to-Ambient
R
ꢀ
JA
250
(Note 1)
Junction and Storage
Temperature Range
T , T
−55 to
+150
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
ORDERING INFORMATION
†
Device
Package
Shipping
BAV70DXV6T1
SOT−563* 4000/Tape & Reel
BAV70DXV6T1G SOT−563* 4000/Tape & Reel
BAV70DXV6T5 SOT−563* 8000/Tape & Reel
BAV70DXV6T5G SOT−563* 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*These packages are inherently Pb−Free.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
March, 2006 − Rev. 2
BAV70DXV6T1/D