BAS21HT1G,
NSVBAS21HT1G,
NSVBAS21HT3G
High Voltage
Switching Diode
http://onsemi.com
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
HIGH VOLTAGE
SWITCHING DIODE
• These are Pb−Free Devices
MAXIMUM RATINGS
1
CATHODE
2
ANODE
Rating
Symbol
Value
250
250
200
500
625
Unit
Vdc
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Current
V
R
V
RRM
Vdc
MARKING
DIAGRAM
I
F
mAdc
mA
2
Repetitive Peak Forward Current
I
FRM
FSM(surge)
SOD−323
CASE 477
STYLE 1
1
Non−Repetitive Peak Forward Surge
Current, 60 Hz
I
mAdc
JS M G
G
Non−Repetitive Peak Forward Current
I
A
FSM
(Square Wave, T = 25°C prior to
J
surge)
JS
M
G
= Device Code
= Date Code*
= Pb−Free Package
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t = 1 s
20
20
10
4
(Note: Microdot may be in either location)
1
*Date Code orientation may vary depending up-
on manufacturing location.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P
200
mW
D
ORDERING INFORMATION
(Note 1)
T = 25°C
A
Derate above 25°C
1.57
635
mW/°C
°C/W
†
Device
Package
Shipping
Thermal Resistance,
R
q
JA
BAS21HT1G
SOD−323 3000 / Tape & Reel
(Pb−Free)
Junction−to−Ambient
Junction and Storage Temperature
Range
T , T
−55 to
+150
°C
J
stg
NSVBAS21HT1G SOD−323 3000 / Tape & Reel
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 Minimum Pad
NSVBAS21HT3G SOD−323
(Pb−Free)
10000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
June, 2013 − Rev. 10
BAS21HT1/D