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NSVBAS21XV2T5G PDF预览

NSVBAS21XV2T5G

更新时间： 2023-09-03 20:37:56
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 102K
描述
250V Switching Diode

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NSVBAS21XV2T5G 数据手册

 浏览型号NSVBAS21XV2T5G的Datasheet PDF文件第2页浏览型号NSVBAS21XV2T5G的Datasheet PDF文件第3页浏览型号NSVBAS21XV2T5G的Datasheet PDF文件第4页 
High Voltage  
Switching Diode  
BAS21XV2  
The BAS21XV2 Switching Diode is a spin−off of our popular  
SOT−23 three−leaded device. It is designed for switching applications  
and is housed in the SOD−523 surface mount package. This device is  
ideal for low−power surface mount applications, where board space is  
at a premium.  
www.onsemi.com  
HIGH VOLTAGE  
SWITCHING DIODE  
Features  
• Extremely Small SOD−523 Package  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
1
CATHODE  
2
ANODE  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
MARKING  
DIAGRAM  
2
MAXIMUM RATINGS  
1
Rating  
Symbol  
Value  
250  
250  
200  
625  
500  
Unit  
Vdc  
XX  
SOD−523  
CASE 502  
Continuous Reverse Voltage  
Repetitive Peak Reverse Voltage  
Continuous Forward Current  
Peak Forward Surge Current  
V
R
1
2
V
RRM  
Vdc  
XX = Specific Device Code  
= Date Code  
I
F
mAdc  
mAdc  
mA  
M
I
FM(surge)  
Repetitive Peak Forward Current  
(Pulse Wave = 1 sec, Duty Cycle = 66%)  
I
FRM  
ORDERING INFORMATION  
Non−Repetitive Peak Forward Current  
I
A
†
FSM  
Device  
Package  
Shipping  
(Square Wave, T = 25°C prior to surge)  
J
t = 1 ꢀ s  
t = 1 ms  
t = 1 s  
5.0  
2.0  
0.5  
BAS21XV2T5G  
SOD−523 8000 / Tape &  
(Pb−Free) Reel  
NSVBAS21XV2T5G  
SOD−523 8000 / Tape &  
(Pb−Free) Reel  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Total Device Dissipation FR−5 Board  
T = 25°C  
A
P
D
250  
500  
mW  
Thermal Resistance Junction−to−Ambient  
(Note 1)  
R
°C/W  
ꢁ
JA  
Junction and Storage Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06″ thick single  
sided. Operating to steady state.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
August, 2021 − Rev. 1  
BAS21XV2/D  
 
1234

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