NSVBAS70LT1G

更新时间： 2024-09-29 12:31:47

品牌	Logo	应用领域
安森美 - ONSEMI		二极管开关
页数	文件大小	规格书
3页	131K
描述
Schottky Barrier Diodes Extremely Fast Switching Speed Low Forward Voltage

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

NSVBAS70LT1G 数据手册

BAS70LT1G,

NSVBAS70LT1G

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

http://onsemi.com

70 VOLTS SCHOTTKY

BARRIER DIODES

Features

 Extremely Fast Switching Speed

 Low Forward Voltage

 AEC Qualified and PPAP Capable

 NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements

 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

SOT−23 (TO−236)

CASE 318

STYLE 8

MAXIMUM RATINGS (T = 150C unless otherwise noted)

Rating

Forward Current

Symbol

Value

Unit

CATHODE

ANODE

MARKING DIAGRAM

Non−Repetitive Peak Forward Surge

Current (t  1.0 s)

100

FSM

Reverse Voltage

BE M G

Forward Power Dissipation

@ T = 25C

225

1.8

mW/C

Derate above 25C

Operating Junction and Storage

Temperature Range

−55 to +150

C

J, stg

BE Specific Device Code

= Date Code*

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may vary

depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

BAS70LT1G

SOT−23

3,000 /

(Pb−Free)

Tape & Reel

NSVBAS70LT1G

SOT−23

3,000 /

(Pb−Free)

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2011

Publication Order Number:

November, 2011 − Rev. 8

BAS70LT1/D

12 3

中文翻译

下载PDF

NSVBAS70LT1G 替代型号

型号	品牌	替代类型	描述	数据表
SB05-05C-TB-E	ONSEMI	类似代替	500 mA, 50 V, Schottky Barrier Diode, Low IR, Single CP
SBAS40-04LT1G	ONSEMI	类似代替	40 V 肖特基二极管，双，串联
BAS40-06LT1G	ONSEMI	类似代替	Common Anode Schottky Barrier Diodes

与NSVBAS70LT1G相关器件

型号	品牌	获取价格	描述	数据表
NSVBASH16MX2WT5G	ONSEMI	获取价格	High Voltage Switching Diode Series, +175°C
NSVBASH19LT1G	ONSEMI	获取价格	高压开关二极管，+175°C
NSVBASH19MX2WT5G	ONSEMI	获取价格	High Voltage Switching Diode Series, +175°C
NSVBASH20LT1G	ONSEMI	获取价格	高压开关二极管，+175°C
NSVBASH20MX2WT5G	ONSEMI	获取价格	High Voltage Switching Diode Series, +175°C
NSVBASH21LT1G	ONSEMI	获取价格	高压开关二极管，+175°C
NSVBASH21MX2WT5G	ONSEMI	获取价格	High Voltage Switching Diode Series, +175°C
NSVBAT54HT1G	ONSEMI	获取价格	Schottky Barrier Diodes
NSVBAT54LT1G	ONSEMI	获取价格	30 V 肖特基二极管
NSVBAT54M3T5G	ONSEMI	获取价格	肖特基势垒二极管

与NSVBAS70LT1G相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

27
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

23
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

22
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

35

产品中心

服务支持

精选活动

关于我们

帮助中心

NSVBAS70LT1G

NSVBAS70LT1G 数据手册

NSVBAS70LT1G 替代型号

与NSVBAS70LT1G相关器件

与NSVBAS70LT1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NSVBAS70LT1G

NSVBAS70LT1G 数据手册

NSVBAS70LT1G 替代型号

与NSVBAS70LT1G相关器件

与NSVBAS70LT1G相关文章

您还可以找

您在本页遇到什么问题？