Datasheet > NST65010MW6T1G

NST65010MW6T1G

更新时间： 2024-11-05 01:16:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	73K
描述
Dual Matched General Purpose Transistor

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中文翻译

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技术参数
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NST65010MW6T1G 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	compliant	Factory Lead Time：	8 weeks
风险等级：	1.54	Base Number Matches：	1

NST65010MW6T1G 数据手册

NST65010MW6

Dual Matched General

Purpose Transistor

PNP Matched Pair

These transistors are housed in an ultra−small SOT−363 package

ideally suited for portable products. They are assembled to create a

pair of devices highly matched in all parameters, eliminating the need

for costly trimming. Applications are Current Mirrors; Differential,

Sense and Balanced Amplifiers; Mixers; Detectors and Limiters.

Complementary NPN equivalent NST65011MW6T1G is available.

www.onsemi.com

SOT−363

CASE 419B

STYLE 1

Features

• Current Gain Matching to 10%

• Base−Emitter Voltage Matched to ≤ 2 mV

• Drop−In Replacement for Standard Device

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

(3)

(2)

(1)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

(4)

(5)

(6)

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

−65

Unit

MARKING DIAGRAMS

CEO

CBO

EBO

−80

4G MG

−5.0

−100

Collector Current − Continuous

mAdc

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

4G = Device Code

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

ORDERING INFORMATION

Total Device Dissipation

Per Device

FR−5 Board (Note 1)

380

250

†

Device

Package

Shipping

T = 25°C

Derate Above 25°C

NST65010MW6T1G

SOT−363

(Pb−Free)

3000 /

Tape & Reel

3.0

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient

328

NSVT65010MW6T1G SOT−363

(Pb−Free)

3000 /

Tape & Reel

Junction and Storage

Temperature Range

T , T

−55 to +150

°C

stg

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

Publication Order Number:

July, 2015 − Rev. 0

NST65010MW6/D

12 3 4 5

中文翻译

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NST65010MW6T1G 替代型号

型号	品牌	替代类型	描述	数据表
EMT1DXV6T1G	ONSEMI	功能相似	Dual General Purpose Transistor

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