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NST65011MW6 PDF预览

NST65011MW6

更新时间: 2024-02-19 02:40:29
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 73K
描述
Dual Matched General Purpose Transistor

NST65011MW6 数据手册

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NST65011MW6  
Dual Matched General  
Purpose Transistor  
NPN Matched Pair  
These transistors are housed in an ultra−small SOT−363 package  
ideally suited for portable products. They are assembled to create a  
pair of devices highly matched in all parameters, eliminating the need  
for costly trimming. Applications are Current Mirrors; Differential,  
Sense and Balanced Amplifiers; Mixers; Detectors and Limiters.  
Complementary PNP equivalent NST65010MW6T1G is available.  
www.onsemi.com  
SOT−363  
CASE 419B  
STYLE 1  
Features  
Current Gain Matching to 10%  
Base−Emitter Voltage Matched to 2 mV  
Drop−In Replacement for Standard Device  
(3)  
(2)  
(1)  
Q
NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
Q
1
2
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
(4)  
(5)  
(6)  
MAXIMUM RATINGS  
MARKING DIAGRAMS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
65  
Unit  
V
V
CEO  
V
CBO  
V
EBO  
2G MG  
80  
V
G
6.0  
V
Collector Current − Continuous  
I
C
100  
mAdc  
2G = Device Code  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
M
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
ORDERING INFORMATION  
Total Device Dissipation  
Per Device  
P
D
380  
250  
mW  
Device  
Package  
Shipping  
NST65011MW6T1G  
SOT−363  
3,000 /  
FR5 Board (Note 1)  
(Pb−Free) Tape & Reel  
T = 25°C  
A
Derate Above 25°C  
3.0  
mW/°C  
°C/W  
NSVT65011MW6T1G SOT−363 3,000 /  
(Pb−Free) Tape & Reel  
Thermal Resistance,  
Junction to Ambient  
R
328  
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Junction and Storage  
Temperature Range  
T , T  
J
55 to +150  
°C  
stg  
1. FR−5 = 1.0 x 0.75 x 0.062 in  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
July, 2015 − Rev. 0  
NST65011MW6/D  
 

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