Datasheet > NLAS3699

NLAS3699

更新时间： 2024-11-01 22:28:59

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管
页数	文件大小	规格书
10页	83K
描述
Dual DPDT Ultra-Low RON Switch

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NLAS3699 数据手册

NLAS3699

Dual DPDT Ultra−Low R_ON

Switch

The NLAS3699 is a dual independent ultra−low R DPDT analog

switch. This device is designed for low operating voltage, high current

switching of speaker output for cell phone applications. It can switch a

balanced stereo output. The NLAS3699 can handle a balanced

microphone/speaker/ring−tone generator in a monophone mode. The

device contains a break−make feature.

http://onsemi.com

MARKING

DIAGRAMS

Features

• Single Supply Operation

QFN−16

1.65 to 4.7 V V

NLAS

3699

ALYW

CASE 485AE

Function Directly from LiON Battery

• Maximum Breakdown Voltage: 5.0 V

• Tiny 3 x 3 mm QFN Pb−Free Package

Meet JEDEC MO−220 Specifications

• Low Static Power

XXXX = Specific Device Code

= Assembly Location

= Wafer Lot

= Year

= Work Week

= Pb−Free Package

Typical Applications

• Cell Phone Speaker/Microphone Switching

• Ringtone−Chip/Amplifier Switching

• Four Unbalanced (Single−Ended) Switches

• Stereo Balanced (Push−Pull) Switching

D1 1S1 Vcc 4S2

Important Information

• ESD Protection:

1S2

1−2IN

2S1

HBM (Human Body Model) > 4000 V

MM (Machine Model) > 400 V

4S1

• Continuous Current Rating Through each Switch ±300 mA

• Conforms to: JEDEC MO−220, Issue H, Variation VEED−6

• Pin for Pin Compatible with STG3699

3−4IN

3S2

2S2 GND 3S1 D3

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 9 of this data sheet.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

October, 2004 − Rev. 0

NLAS3699/D

12 3 4 5 6 7...10

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