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NLAS3699BMN1R2G PDF预览

NLAS3699BMN1R2G

更新时间: 2024-11-02 03:22:19
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管
页数 文件大小 规格书
10页 98K
描述
Dual DPDT Ultra−Low RON Switch

NLAS3699BMN1R2G 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:QFN包装说明:HVQCCN, LCC16,.12SQ,20
针数:16Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.57
模拟集成电路 - 其他类型:DPDTJESD-30 代码:S-XQCC-N16
JESD-609代码:e3长度:3 mm
湿度敏感等级:1信道数量:2
功能数量:2端子数量:16
标称断态隔离度:62 dB通态电阻匹配规范:0.06 Ω
最大通态电阻 (Ron):0.75 Ω最高工作温度:85 °C
最低工作温度:-40 °C输出:SEPARATE OUTPUT
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装等效代码:LCC16,.12SQ,20封装形状:SQUARE
封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):260
电源:1.8/4 V认证状态:Not Qualified
座面最大高度:1 mm子类别:Multiplexer or Switches
最大供电电压 (Vsup):4.5 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
最长断开时间:40 ns最长接通时间:60 ns
切换:BREAK-BEFORE-MAKE温度等级:INDUSTRIAL
端子面层:Tin (Sn)端子形式:NO LEAD
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:40宽度:3 mm
Base Number Matches:1

NLAS3699BMN1R2G 数据手册

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NLAS3699B  
Dual DPDT Ultra−Low RON  
Switch  
The NLAS3699B is a dual independent ultra−low R  
DPDT  
ON  
analog switch. This device is designed for low operating voltage, high  
current switching of speaker output for cell phone applications. It can  
switch a balanced stereo output. The NLAS3699B can handle a  
balanced microphone/speaker/ring−tone generator in a monophone  
mode. The device contains a break−before−make feature.  
http://onsemi.com  
MARKING  
DIAGRAMS  
Features  
16  
Single Supply Operation  
1
QFN−16  
CASE 485AE  
1.65 to 4.5 V V  
CC  
NLAB  
3699  
ALYWG  
G
Function Directly from LiON Battery  
1
Maximum Breakdown Voltage: 5.5 V  
Tiny 3 x 3 mm QFN Pb−Free Package  
Meet JEDEC MO−220 Specifications  
Low Static Power  
A
L
Y
W
G
= Assembly Location  
= Wafer Lot  
= Year  
This is a Pb−Free Device*  
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
Typical Applications  
Cell Phone Speaker/Microphone Switching  
Ringtone−Chip/Amplifier Switching  
Four Unbalanced (Single−Ended) Switches  
Stereo Balanced (Push−Pull) Switching  
D1 1S1 Vcc 4S2  
16  
15  
14  
13  
Important Information  
1
2
3
4
12  
11  
10  
9
1S2  
1−2IN  
2S1  
D4  
ESD Protection:  
4S1  
3−4IN  
3S2  
HBM (Human Body Model) > 8000 V  
MM (Machine Model) > 400 V  
Continuous Current Rating Through each Switch 300 mA  
Conforms to: JEDEC MO−220, Issue H, Variation VEED−6  
Pin for Pin Compatible with STG3699  
D2  
5
6
7
8
2S2 GND 3S1 D3  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 9 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 0  
NLAS3699B/D  

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