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NLAS3799MNR2G PDF预览

NLAS3799MNR2G

更新时间: 2024-11-02 03:46:23
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管
页数 文件大小 规格书
11页 99K
描述
Dual DPDT Ultra−Low RON Switch

NLAS3799MNR2G 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:QFN包装说明:VQCCN, LCC16,.07X.1,16
针数:16Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:6.01
模拟集成电路 - 其他类型:DPDTJESD-30 代码:R-XQCC-N16
JESD-609代码:e4长度:2.6 mm
湿度敏感等级:1正常位置:NC
信道数量:2功能数量:2
端子数量:16标称断态隔离度:69 dB
通态电阻匹配规范:0.05 Ω最大通态电阻 (Ron):0.5 Ω
最高工作温度:85 °C最低工作温度:-40 °C
输出:SEPARATE OUTPUT封装主体材料:UNSPECIFIED
封装代码:VQCCN封装等效代码:LCC16,.07X.1,16
封装形状:RECTANGULAR封装形式:CHIP CARRIER, VERY THIN PROFILE
峰值回流温度(摄氏度):260电源:1.8/3.3 V
认证状态:Not Qualified座面最大高度:0.8 mm
子类别:Multiplexer or Switches最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):3 V
表面贴装:YES最长断开时间:30 ns
最长接通时间:50 ns切换:BREAK-BEFORE-MAKE
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子节距:0.4 mm
端子位置:QUAD处于峰值回流温度下的最长时间:40
宽度:1.8 mmBase Number Matches:1

NLAS3799MNR2G 数据手册

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NLAS3799, NLAS3799L  
Dual DPDT Ultra−Low RON  
Switch  
The NLAS3799 is an ultra−low R DPDT and a 0.5 R DPDT  
ON  
ON  
analog switch. This device is designed for low operating voltage, high  
current switching of speaker output and earpiece for cellphone  
applications. It can switch a balanced stereo output. The NLAS3799  
can handle a balanced microphone/speaker/ring−tone generator in a  
monophone mode. The device contains a break−before−make (BBM)  
feature.  
http://onsemi.com  
MARKING  
DIAGRAMS  
16  
Features  
1
Single Supply Operation  
XXM  
G
1
1.65 to 3.6 V V  
CC  
WQFN−16  
CASE 488AP  
Maximum Breakdown Voltage: 4.6 V  
Low Static Power  
NLAS3799 Interfaces with 2.8 V Chipset  
NLAS3799L Interfaces with 1.8 V Chipset  
These are Pb−Free Devices*  
XX  
= Specific Device Code  
AR = NLAS3799  
AT = NLAS3799L  
= Date Code/Assembly Location  
= Pb−Free Package  
M
G
Typical Applications  
Cell Phone Speaker/Microphone Switching  
Ringtone−Chip/Amplifier Switching  
Four Unbalanced (Single−Ended) Switches  
Stereo Balanced (Push−Pull) Switching  
COMA NOA Vcc NCD  
16  
15  
14  
13  
1
12  
NCA  
A−B IN  
NOB  
COMD  
NOD  
Important Information  
ESD Protection:  
2
3
4
11  
10  
9
HBM (Human Body Model) > 8000 V  
MM (Machine Model) > 400 V  
C−D IN  
NCC  
Continuous Current Rating Through each Switch 300 mA  
Conforms to: JEDEC MO−220, Issue H, Variation VEED−6  
Package: 1.8 x 2.6 x 0.75 mm WQFN−16 Pb−Free  
COMB  
5
6
7
8
NCB GND NOCCOMC  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 10 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 1  
NLAS3799/D  

NLAS3799MNR2G 替代型号

型号 品牌 替代类型 描述 数据表
NLAS3799BMUR2G ONSEMI

完全替代

Dual DPDT Ultra-Low RON Switch
NLAS3799BMNR2G ONSEMI

完全替代

Dual DPDT Ultra−Low RON Switch
NLAS3799BLMNR2G ONSEMI

完全替代

Dual DPDT Ultra−Low RON Switch

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