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NLAS3899BMNTXG PDF预览

NLAS3899BMNTXG

更新时间: 2024-11-19 05:54:07
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管
页数 文件大小 规格书
10页 134K
描述
Dual DPDT Low RON, Low Capacitance Switch

NLAS3899BMNTXG 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:QFN包装说明:HVQCCN, LCC16,.12SQ,20
针数:16Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:1.5
模拟集成电路 - 其他类型:DPDTJESD-30 代码:S-XQCC-N16
JESD-609代码:e3长度:3 mm
湿度敏感等级:1信道数量:2
功能数量:2端子数量:16
标称断态隔离度:67 dB通态电阻匹配规范:0.8 Ω
最大通态电阻 (Ron):3 Ω最高工作温度:85 °C
最低工作温度:-40 °C输出:SEPARATE OUTPUT
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装等效代码:LCC16,.12SQ,20封装形状:SQUARE
封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.8/4 V认证状态:Not Qualified
座面最大高度:1 mm子类别:Multiplexer or Switches
最大供电电压 (Vsup):4.3 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):3 V表面贴装:YES
最长断开时间:30 ns最长接通时间:40 ns
切换:BREAK-BEFORE-MAKE温度等级:INDUSTRIAL
端子面层:Tin (Sn)端子形式:NO LEAD
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3 mm
Base Number Matches:1

NLAS3899BMNTXG 数据手册

 浏览型号NLAS3899BMNTXG的Datasheet PDF文件第2页浏览型号NLAS3899BMNTXG的Datasheet PDF文件第3页浏览型号NLAS3899BMNTXG的Datasheet PDF文件第4页浏览型号NLAS3899BMNTXG的Datasheet PDF文件第5页浏览型号NLAS3899BMNTXG的Datasheet PDF文件第6页浏览型号NLAS3899BMNTXG的Datasheet PDF文件第7页 
NLAS3899B  
Dual DPDT Low RON, Low  
Capacitance Switch  
The NLAS3899B is a dual DPDT analog switch designed for low  
power audio and dual SIM card applications. The low R of 3.0  
ON  
(typical) is ideal for routing audio signals to or from a moderately high  
http://onsemi.com  
MARKING  
impedance load. In addition, the low C of 20 pF (typical) gives the  
ON  
NLAS3899B a high bandwidth of 280 MHz, perfect for dual SIM card  
applications.  
DIAGRAMS  
Features  
16  
Single Supply Operation  
1
1.65 to 4.3 V V  
CC  
AAMG  
Function Directly from LiIon Battery  
G
Low ON Resistance (3.0 Typical Across V  
)
CC  
WQFN16  
CASE 488AP  
1
Low C (20 pF Typical)  
ON  
Bandwidth 280 MHz  
16  
1
Maximum Breakdown Voltage: 5.5 V  
Low Static Power  
QFN16  
CASE 485AE  
NLAS  
3899  
ALYW  
1
Interfaces with 1.8 V Chipset  
These are PbFree Devices  
Typical Applications  
XX  
A
M
L
= Specific Device Code  
= Assembly Location  
= Date Code/Assembly Location  
= Wafer Lot  
= Year  
= Work Week  
Cell Phone Speaker/Microphone Switching  
RingtoneChip/Amplifier Switching  
Dual SIM Card Data Switching  
Four Unbalanced (SingleEnded) Switches  
Y
W
G
= PbFree Package  
Important Information  
ESD Protection:  
(Note: Microdot may be in either location)  
Human Body Model (HBM) 1000 V All Pins  
Human Body Model (HBM) 5000 V I/O to GND  
COMA NOA Vcc NCD  
Continuous Current Rating Through each Switch 300 mA  
Conforms to: JEDEC MO220, Issue H, Variation VEED6  
16  
15  
14  
13  
Package:  
1
12  
NCA  
AB IN  
NOB  
COMD  
NOD  
1.8 x 2.6 x 0.75 mm WQFN16 PbFree  
3.0 x 3.0 x 0.9 mm QFN16 PbFree  
2
3
4
11  
10  
9
CD IN  
NCC  
COMB  
5
6
7
8
NCB GND NOCCOMC  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 8 of this data sheet.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
July, 2008 Rev. 0  
NLAS3899B/D  

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