Datasheet > NLAS3899B_12

NLAS3899B_12

更新时间： 2024-02-29 22:23:28

品牌	Logo	应用领域
安森美 - ONSEMI		光电二极管
页数	文件大小	规格书
10页	137K
描述
Dual DPDT Low RON, Low Capacitance Switch

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数据手册

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NLAS3899B_12 数据手册

NLAS3899B

Dual DPDT Low R_ON, Low

Capacitance Switch

The NLAS3899B is a dual DPDT analog switch designed for low

power audio and dual SIM card applications. The low R of 3.0

ꢀ

(typical) is ideal for routing audio signals to or from a moderately high

http://onsemi.com

MARKING

impedance load. In addition, the low C of 20 pF (typical) gives the

NLAS3899B a high bandwidth of 280 MHz, perfect for dual SIM card

applications.

DIAGRAMS

Features

• Single Supply Operation

1.65 to 4.3 V V

AAMG

Function Directly from Li−Ion Battery

• Low ON Resistance (3.0 ꢀ Typical Across V

)

WQFN16

CASE 488AP

• Low C (20 pF Typical)

• Bandwidth 280 MHz

• Maximum Breakdown Voltage: 5.5 V

• Low Static Power

QFN16

CASE 485AE

NLAS

3899

ALYW

• Interfaces with 1.8 V Chipset

• These are Pb−Free Devices

Typical Applications

= Specific Device Code

= Assembly Location

= Date Code/Assembly Location

= Wafer Lot

= Year

= Work Week

• Cell Phone Speaker/Microphone Switching

• Ringtone−Chip/Amplifier Switching

• Dual SIM Card Data Switching

• Four Unbalanced (Single−Ended) Switches

= Pb−Free Package

Important Information

• ESD Protection:

(Note: Microdot may be in either location)

Human Body Model (HBM) 1000 V − All Pins

Human Body Model (HBM) 5000 V − I/O to GND

• Continuous Current Rating Through each Switch 300 mA

COMA NOA Vcc NCD

• Conforms to: JEDEC MO−220, Issue H, Variation VEED−6

• Package:

NCA

A−B IN

NOB

COMD

NOD

♦ 1.8 x 2.6 x 0.75 mm WQFN16 Pb−Free

♦ 3.0 x 3.0 x 0.9 mm QFN16 Pb−Free

C−D IN

NCC

COMB

NCB GND NOCCOMC

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 8 of this data sheet.

Semiconductor Components Industries, LLC, 2012

Publication Order Number:

August, 2012 − Rev. 1

NLAS3899B/D

12 3 4 5 6 7...10

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