NLAS3799B, NLAS3799BL
Dual DPDT Ultra-Low RON
Switch
The NLAS3799B is an ultra−low R dual DPDT and a 0.5 ꢀ R
ON
ON
analog switch. This device is designed for low operating voltage, high
current switching of speaker output and earpiece for cellphone
applications. It can switch a balanced stereo output. The NLAS3799B
can handle a balanced microphone/speaker/ring−tone generator in a
monophone mode. The device contains a break−before−make (BBM)
feature.
http://onsemi.com
MARKING
DIAGRAMS
16
Features
1
• Single Supply Operation
XXMG
1.65 to 4.5 V V
CC
G
Function Directly from LiON Battery
• Maximum Breakdown Voltage: 5.5 V
• Low Static Power
WQFN−16
CASE 488AP
1
16
• NLAS3799B Interfaces with 2.8 V Chipset
NLAS3799BL Interfaces with 1.8 V Chipset
• These are Pb−Free Devices
1
XXMG
1
G
UQFN−16
CASE 488AU
Typical Applications
• Cell Phone Speaker/Microphone Switching
• Ringtone−Chip/Amplifier Switching
• Four Unbalanced (Single−Ended) Switches
• Stereo Balanced (Push−Pull) Switching
XX
= Specific Device Code
AK = NLAS3799BMNR2G
AL = NLAS3799BLMNR2G
AX = NLAS3799BMUR2G
= Date Code/Assembly Location
M
G
Important Information
= Pb−Free Package
• ESD Protection:
(Note: Microdot may be in either location)
COMA NOA Vcc NCD
Human Body Model (HBM) > 8000 V
Machine Model (MM) > 400 V
• Continuous Current Rating Through each Switch 300 mA
16
15
14
13
• Conforms to: JEDEC MO−220, Issue H, Variation VEED−6
• Package:
1
12
NCA
A−B IN
NOB
COMD
NOD
♦ 1.8 x 2.6 x 0.75 mm WQFN−16 Pb−Free
♦ 1.8 x 2.6 x 0.55 mm UQFN−16 Pb−Free
2
3
4
11
10
9
C−D IN
NCC
COMB
5
6
7
8
NCB GND NOCCOMC
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
©
Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
July, 2008 − Rev. 3
NLAS3799B/D