Datasheet > NLAS3799_06

NLAS3799_06

更新时间： 2024-11-19 03:46:23

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管
页数	文件大小	规格书
11页	99K
描述
Dual DPDT Ultra−Low RON Switch

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数据手册

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NLAS3799_06 数据手册

NLAS3799, NLAS3799L

Dual DPDT Ultra−Low R_ON

Switch

The NLAS3799 is an ultra−low R DPDT and a 0.5 ꢀ R DPDT

analog switch. This device is designed for low operating voltage, high

current switching of speaker output and earpiece for cellphone

applications. It can switch a balanced stereo output. The NLAS3799

can handle a balanced microphone/speaker/ring−tone generator in a

monophone mode. The device contains a break−before−make (BBM)

feature.

http://onsemi.com

MARKING

DIAGRAMS

Features

• Single Supply Operation

XXM

1.65 to 3.6 V V

WQFN−16

CASE 488AP

• Maximum Breakdown Voltage: 4.6 V

• Low Static Power

• NLAS3799 Interfaces with 2.8 V Chipset

NLAS3799L Interfaces with 1.8 V Chipset

• These are Pb−Free Devices*

= Specific Device Code

AR = NLAS3799

AT = NLAS3799L

= Date Code/Assembly Location

= Pb−Free Package

Typical Applications

• Cell Phone Speaker/Microphone Switching

• Ringtone−Chip/Amplifier Switching

• Four Unbalanced (Single−Ended) Switches

• Stereo Balanced (Push−Pull) Switching

COMA NOA Vcc NCD

NCA

A−B IN

NOB

COMD

NOD

Important Information

• ESD Protection:

HBM (Human Body Model) > 8000 V

MM (Machine Model) > 400 V

C−D IN

NCC

• Continuous Current Rating Through each Switch 300 mA

• Conforms to: JEDEC MO−220, Issue H, Variation VEED−6

• Package: 1.8 x 2.6 x 0.75 mm WQFN−16 Pb−Free

COMB

NCB GND NOCCOMC

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 10 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 1

NLAS3799/D

12 3 4 5 6 7...11

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