Datasheet > NLAS3699B

NLAS3699B

更新时间： 2024-11-23 03:46:23

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管
页数	文件大小	规格书
10页	98K
描述
Dual DPDT Ultra−Low RON Switch

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NLAS3699B 数据手册

NLAS3699B

Dual DPDT Ultra−Low R_ON

Switch

The NLAS3699B is a dual independent ultra−low R

DPDT

analog switch. This device is designed for low operating voltage, high

current switching of speaker output for cell phone applications. It can

switch a balanced stereo output. The NLAS3699B can handle a

balanced microphone/speaker/ring−tone generator in a monophone

mode. The device contains a break−before−make feature.

http://onsemi.com

MARKING

DIAGRAMS

Features

• Single Supply Operation

QFN−16

CASE 485AE

1.65 to 4.5 V V

NLAB

3699

ALYWG

Function Directly from LiON Battery

• Maximum Breakdown Voltage: 5.5 V

• Tiny 3 x 3 mm QFN Pb−Free Package

Meet JEDEC MO−220 Specifications

• Low Static Power

= Assembly Location

= Wafer Lot

= Year

• This is a Pb−Free Device*

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

Typical Applications

• Cell Phone Speaker/Microphone Switching

• Ringtone−Chip/Amplifier Switching

• Four Unbalanced (Single−Ended) Switches

• Stereo Balanced (Push−Pull) Switching

D1 1S1 Vcc 4S2

Important Information

1S2

1−2IN

2S1

• ESD Protection:

4S1

3−4IN

3S2

HBM (Human Body Model) > 8000 V

MM (Machine Model) > 400 V

• Continuous Current Rating Through each Switch 300 mA

• Conforms to: JEDEC MO−220, Issue H, Variation VEED−6

• Pin for Pin Compatible with STG3699

2S2 GND 3S1 D3

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 9 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

March, 2006 − Rev. 0

NLAS3699B/D

12 3 4 5 6 7...10

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