生命周期: | Obsolete | 零件包装代码: | SOT-223 |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.71 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 3 A |
最大漏源导通电阻: | 0.18 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 20 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDT452PJ23ZD84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 30V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal | |
NDT452PL84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 30V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal | |
NDT452PL99Z | FAIRCHILD |
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Power Field-Effect Transistor, 3A I(D), 30V, 0.32ohm, P-Channel, Silicon, Metal-oxide Semi | |
NDT452PS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 30V, 0.32ohm, P-Channel, Silicon, Metal-oxide Semi | |
NDT453N | FAIRCHILD |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor | |
NDT453N | TI |
获取价格 |
8A, 30V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261 | |
NDT453N(J23Z) | FAIRCHILD |
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TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8A I(D) | SOT-223 | |
NDT453N/J23Z | TI |
获取价格 |
8A, 30V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET | |
NDT453N/L99Z | TI |
获取价格 |
8A, 30V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261 | |
NDT453ND84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Meta |