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NDT453N(J23Z) PDF预览

NDT453N(J23Z)

更新时间: 2024-09-17 23:53:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
10页 227K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8A I(D) | SOT-223

NDT453N(J23Z) 数据手册

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September 1996  
NDT453N  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
Power SOT N-Channel enhancement mode power field  
effect transistors are produced using Fairchild's  
proprietary, high cell density, DMOS technology. This very  
high density process is especially tailored to minimize  
on-state resistance and provide superior switching  
performance. These devices are particularly suited for low  
voltage applications such as notebook computer power  
management and other battery powered circuits where fast  
switching, low in-line power loss, and resistance to  
transients are needed.  
8A, 30V. RDS(ON) = 0.028W @ VGS = 10V.  
RDS(ON) = 0.042W @ VGS = 4.5V.  
High density cell design for extremely low RDS(ON)  
.
High power and current handling capability in a widely used  
surface mount package.  
___________________________________________________________________________________________  
D
D
D
S
G
S
G
Absolute Maximum Ratings  
TA= 25°C unless otherwise not  
Symbol Parameter  
NDT453N  
30  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
A
±20  
Drain Current - Continuous  
- Pulsed  
(Note 1a)  
(Note 1a)  
±8  
±15  
Maximum Power Dissipation  
3
W
PD  
(Note 1b)  
(Note 1c)  
1.3  
1.1  
TJ,TSTG  
Operating and Storage Temperature Range  
-65 to 150  
°C  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
42  
12  
°C/W  
°C/W  
R
JA  
q
Thermal Resistance, Junction-to-Case  
R
JC  
q
* Order option J23Z for cropped center drain lead.  
© 1997 Fairchild Semiconductor Corporation  
NDT453N Rev. D1  

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