Datasheet > NDT454P(J23Z)

NDT454P(J23Z)

更新时间： 2024-02-07 11:39:17

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
6页	95K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 30V V(BR)DSS \| 5.9A I(D) \| SOT-223

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NDT454P(J23Z) 数据手册

June 1996

NDT454P

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

-5.9A, -30V. R_DS(ON)= 0.05W @ V_GS= -10V

Power SOT P-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance and provide

superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer

power management and other battery powered circuits where

fast switching, low in-line power loss, and resistance to

transients are needed.

R_DS(ON)= 0.07W @ V_GS= -6V

R_DS(ON)= 0.09W @ V_GS= -4.5V.

High density cell design for extremely low R_DS(ON).

High power and current handling capability in a widely used

surface mount package.

____________________________________________________________________________________________

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol Parameter

NDT454P

-30

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

V_DSS

V_GSS

I_D

±20

(Note 1a)

±5.9

±15

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.3

1.1

(Note 1c)

Operating and Storage Temperature Range

-65 to 150

°C

T_J,T_STG

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient (Note 1a)

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

* Order option J23Z for cropped center drain lead.

NDT454P Rev. D2

12 3 4 5 6

中文翻译

下载PDF

与NDT454P(J23Z)相关器件

型号	品牌	获取价格	描述	数据表
NDT454P/D84Z	TI	获取价格	5.9A, 30V, 0.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261
NDT454P/J23Z	TI	获取价格	5.9A, 30V, 0.05ohm, P-CHANNEL, Si, POWER, MOSFET
NDT454P/L99Z	TI	获取价格	5.9A, 30V, 0.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261
NDT454P/S62Z	TI	获取价格	5.9A, 30V, 0.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261
NDT454P_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.9A I(D), 30V, 0.05ohm, 1-Element, P-Channel, Silicon, Met
NDT454PD84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.9A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Met
NDT454PJ23Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.9A I(D), 30V, 0.05ohm, 1-Element, P-Channel, Silicon, Met
NDT454PL84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.9A I(D), 30V, 0.05ohm, 1-Element, P-Channel, Silicon, Met
NDT454PS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.9A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Met
NDT455N	FAIRCHILD	获取价格	N-Channel Enhancement Mode Field Effect Transistor