Datasheet > NDT455N(J23Z)

NDT455N(J23Z)

更新时间： 2024-01-27 12:44:58

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
10页	229K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 11.5A I(D) \| SOT-223

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NDT455N(J23Z) 数据手册

July 1996

NDT455N

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

11.5 A, 30 V. R_DS(ON)= 0.015 W @ V_GS= 10 V

These N-Channel logic level enhancement mode power field

effect transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. This very high density process

is especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy

pulses in the avalanche and commutation modes. These devices

are particularly suited for low voltage applications such as DC

motor control and DC/DC conversion where fast switching, low

in-line power loss, and resistance to transients are needed.

R_DS(ON)= 0.02 W @ V_GS= 4.5 V.

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a widely used

surface mount package.

________________________________________________________________________________

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol Parameter

NDT455N

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

Drain Current

- Continuous

- Pulsed

(Note 1a)

± 11.5

± 40

Maximum Power Dissipation

P_D

(Note 1b)

(Note 1c)

1.3

1.1

T_J,T_STG

Operating and Storage Temperature Range

-65 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

NDT455N Rev.F

12 3 4 5 6 7...10

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与NDT455N(J23Z)相关器件

型号	品牌	获取价格	描述	数据表
NDT455N/L99Z	TI	获取价格	11.5A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT455N/S62Z	TI	获取价格	11.5A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT455ND84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 11.5A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, M
NDT455NJ23Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 11.5A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, M
NDT455NJ23ZD84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 11.5A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, M
NDT455NL84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 11.5A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, M
NDT455NL99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 11.5A I(D), 30V, 0.02ohm, N-Channel, Silicon, Metal-oxide S
NDT455NS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 11.5A I(D), 30V, 0.02ohm, N-Channel, Silicon, Metal-oxide S
NDT456	FAIRCHILD	获取价格	P-Channel Enhancement Mode Field Effect Transistor
NDT456P	FAIRCHILD	获取价格	P-Channel Enhancement Mode Field Effect Transistor