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NDT456P PDF预览

NDT456P

更新时间: 2023-09-03 20:31:02
品牌 Logo 应用领域
安森美 - ONSEMI PC开关脉冲光电二极管晶体管场效应晶体管
页数 文件大小 规格书
8页 424K
描述
P 沟道增强型场效应晶体管

NDT456P 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.83
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):7.5 A
最大漏极电流 (ID):7.5 A最大漏源导通电阻:0.03 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-261
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
功耗环境最大值:1.1 W最大功率耗散 (Abs):3 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):260 ns
最大开启时间(吨):140 nsBase Number Matches:1

NDT456P 数据手册

 浏览型号NDT456P的Datasheet PDF文件第2页浏览型号NDT456P的Datasheet PDF文件第3页浏览型号NDT456P的Datasheet PDF文件第4页浏览型号NDT456P的Datasheet PDF文件第5页浏览型号NDT456P的Datasheet PDF文件第6页浏览型号NDT456P的Datasheet PDF文件第7页 
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NDT456P 替代型号

型号 品牌 替代类型 描述 数据表
FDT458P ONSEMI

类似代替

-30V P沟道PowerTrench® MOSFET
NDT452AP ONSEMI

类似代替

P 沟道增强型场效应晶体管 -30V,-5A,65mΩ
NDT454P ONSEMI

类似代替

P 沟道增强型场效应晶体管 -30V,-5.9A,50mΩ

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