Datasheet > NDT454P

NDT454P

更新时间： 2023-09-03 20:30:07

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲光电二极管晶体管场效应晶体管
页数	文件大小	规格书
8页	426K
描述
P 沟道增强型场效应晶体管 -30V，-5.9A，50mΩ

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NDT454P 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PDSO-G4	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.81
Is Samacsys：	N	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	5.9 A	最大漏极电流 (ID)：	5.9 A
最大漏源导通电阻：	0.05 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-261	JESD-30 代码：	R-PDSO-G4
JESD-609代码：	e0	元件数量：	1
端子数量：	4	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	P-CHANNEL	功耗环境最大值：	1.1 W
最大功率耗散 (Abs)：	3 W	最大脉冲漏极电流 (IDM)：	15 A
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
最大关闭时间（toff）：	220 ns	最大开启时间（吨）：	90 ns
Base Number Matches：	1

NDT454P 数据手册

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NDT454P 替代型号

型号	品牌	替代类型	描述	数据表
FDT458P	ONSEMI	类似代替	-30V P沟道PowerTrench® MOSFET
NDT452AP	ONSEMI	类似代替	P 沟道增强型场效应晶体管 -30V，-5A，65mΩ
NDT456P	ONSEMI	类似代替	P 沟道增强型场效应晶体管

与NDT454P相关器件

型号	品牌	获取价格	描述	数据表
NDT454P(J23Z)	FAIRCHILD	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 30V V(BR)DSS \| 5.9A I(D) \| SOT-223
NDT454P/D84Z	TI	获取价格	5.9A, 30V, 0.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261
NDT454P/J23Z	TI	获取价格	5.9A, 30V, 0.05ohm, P-CHANNEL, Si, POWER, MOSFET
NDT454P/L99Z	TI	获取价格	5.9A, 30V, 0.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261
NDT454P/S62Z	TI	获取价格	5.9A, 30V, 0.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261
NDT454P_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.9A I(D), 30V, 0.05ohm, 1-Element, P-Channel, Silicon, Met
NDT454PD84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.9A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Met
NDT454PJ23Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.9A I(D), 30V, 0.05ohm, 1-Element, P-Channel, Silicon, Met
NDT454PL84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.9A I(D), 30V, 0.05ohm, 1-Element, P-Channel, Silicon, Met
NDT454PS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.9A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Met

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