Datasheet > NDT456P

NDT456P

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	362K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-7.5A;Vgs(th)(V):±20;漏源导通电阻:30mΩ@-10V

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NDT456P 数据手册

NDT456P

UMW

-30 V

P-Channel

MOSFET

General Description

Power SOT-223 P-Channel enhancement mode power

field effect transistors especially tailored to minimize on-

state resistance and provide superior switching

performance. These devices are particularly suited for

low voltage applications such as notebook computer

power management and DC motor control.

Features

•

V_DS(V) =-30V

I_D=-7.5A (V_GS= -10V)

R_DS(ON)<30mΩ (V _GS=-10V)

R_DS(ON)<45mΩ (V _GS=-4.5V)

•

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a widely used

surface mount package.

Absolute Maximum Ratings T = 25°C unless otherwise noted

Symbol

V_DSS

V_GSS

I_D

Parameter

NDT456P

Units

Drain-Source Voltage

Gate-Source Voltage

-30

±20

Drain Current

- Continuous

- Pulsed

Maximum Power Dissipation

(Note 1a)

±7.5

±20

P_D

(Note 1b)

(Note 1c)

1.3

1.1

T_J,T_STG

Operating and Storage Temperature Range

-65 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient (Note 1a)

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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NDT456P_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 7.5A I(D), 30V, 0.03ohm, 1-Element, P-Channel, Silicon, Met
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