Datasheet > NDT453NJ23Z

NDT453NJ23Z

更新时间： 2023-01-03 02:59:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	226K
描述
Power Field-Effect Transistor, 8A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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NDT453NJ23Z 数据手册

September 1996

NDT453N

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

Power SOT N-Channel enhancement mode power field

effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very

high density process is especially tailored to minimize

on-state resistance and provide superior switching

performance. These devices are particularly suited for low

voltage applications such as notebook computer power

management and other battery powered circuits where fast

switching, low in-line power loss, and resistance to

transients are needed.

8A, 30V. R_DS(ON)= 0.028W @ V_GS= 10V.

R_DS(ON)= 0.042W @ V_GS= 4.5V.

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a widely used

surface mount package.

___________________________________________________________________________________________

Absolute Maximum Ratings

T_A= 25°C unless otherwise not

Symbol Parameter

NDT453N

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

±20

Drain Current - Continuous

- Pulsed

(Note 1a)

±8

±15

Maximum Power Dissipation

P_D

(Note 1b)

(Note 1c)

1.3

1.1

T_J,T_STG

Operating and Storage Temperature Range

-65 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

°C/W

Thermal Resistance, Junction-to-Case

* Order option J23Z for cropped center drain lead.

NDT453N Rev. D1

12 3 4 5 6 7...10

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