生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.71 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 5 A |
最大漏源导通电阻: | 0.065 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 15 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDT452APL99Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Meta | |
NDT452P | FAIRCHILD |
获取价格 |
P-Channel Enhancement Mode Field Effect Transistor | |
NDT452P/D84Z | TI |
获取价格 |
3A, 30V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261 | |
NDT452P/J23Z | TI |
获取价格 |
3A, 30V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET | |
NDT452P/L99Z | TI |
获取价格 |
3A, 30V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261 | |
NDT452P/S62Z | TI |
获取价格 |
3A, 30V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261 | |
NDT452PD84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 30V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal | |
NDT452PJ23ZD84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 30V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal | |
NDT452PL84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 30V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal | |
NDT452PL99Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 30V, 0.32ohm, P-Channel, Silicon, Metal-oxide Semi |