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NDT452AP(J23Z) PDF预览

NDT452AP(J23Z)

更新时间: 2022-01-18 17:09:00
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
6页 95K
描述
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223

NDT452AP(J23Z) 数据手册

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June 1996  
NDT452AP  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
Power SOT P-Channel enhancement mode power field  
effect transistors are produced using Fairchild's proprietary,  
high cell density, DMOS technology. This very high density  
process is especially tailored to minimize on-state resistance  
and provide superior switching performance. These devices  
are particularly suited for low voltage applications such as  
notebook computer power management and DC motor  
control.  
-5A, -30V. RDS(ON) = 0.065W @ VGS = -10V  
RDS(ON) = 0.1W @ VGS = -4.5V.  
High density cell design for extremely low RDS(ON)  
.
High power and current handling capability in a widely used  
surface mount package.  
________________________________________________________________________________  
D
D
D
S
S
G
G
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol Parameter  
NDT452AP  
-30  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current - Continuous  
- Pulsed  
V
V
A
±20  
(Note 1a)  
-5  
- 15  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
3
W
PD  
1.3  
(Note 1c)  
1.1  
TJ,TSTG  
Operating and Storage Temperature Range  
-65 to 150  
°C  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
42  
12  
°C/W  
°C/W  
R
JA  
q
R
JC  
q
* Order option J23Z for cropped center drain lead.  
© 1997 Fairchild Semiconductor Corporation  
NDT452AP Rev. B1  

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