是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 5 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 75 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTM5N95 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 950V, 3ohm, 1-Element, N-Channel, Silicon, Metal-o | |
MTM5P18 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 180V, 1ohm, 1-Element, P-Channel, Silicon, Metal-o | |
MTM5P20 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 200V, 1ohm, 1-Element, P-Channel, Silicon, Metal-o | |
MTM5P25 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-o | |
MTM60N05 | NJSEMI |
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SMALL | |
MTM60N06 | MOTOROLA |
获取价格 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR | |
MTM60N06 | NJSEMI |
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SMALL | |
MTM68410 | PANASONIC |
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Small Signal Field-Effect Transistor, 4.8A I(D), 12V, 2-Element, P-Channel, Silicon, Metal | |
MTM68411 | PANASONIC |
获取价格 |
Small Signal Field-Effect Transistor, 4.8A I(D), 12V, 2-Element, P-Channel, Silicon, Metal | |
MTM684110L | PANASONIC |
获取价格 |
Transistor |