Datasheet > 晶体管 > 射频场效应晶体管> MRF5S19150S

MRF5S19150S

更新时间： 2024-11-14 13:11:51

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体射频场效应晶体管功率场效应晶体管放大器局域网
页数	文件大小	规格书
12页	617K
描述
L BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-880S, CASE 465C-02, 2 PIN

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MRF5S19150S 技术参数

生命周期：	Obsolete	包装说明：	FLATPACK, R-CDFP-F2
针数：	2	Reach Compliance Code：	unknown
风险等级：	5.63	Base Number Matches：	1

MRF5S19150S 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

Order this document

by MRF5S19150/D

The RF Sub-Micron MOSFET Line

RF Power Field Effect Transistors

MRF5S19150R3

^{N-Channel Enhancement-Mode Lateral MOSFETs}MRF5S19150SR3

Designed for PCN and PCS base station applications at frequencies from

1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications.

• Typical 2-Carrier N-CDMA Performance for V_DD= 28 Volts,

P_out= 32 Watts, I_DQ= 1400 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz

IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)

1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured

over a 30 kHz Bandwidth at f1 -885 kHz and f2 +885 kHz. Distortion

Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and

f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.

Output Power — 32 Watts Avg.

1990 MHz, 32 W, 28 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Power Gain — 14 dB

Efficiency — 26%

ACPR — -50 dB

IM3 — -36.5 dBc

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

CASE 465B-03, STYLE 1

NI-880

MRF5S19150R3

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,

100 Watts CW Output Power

• Excellent Thermal Stability

• Qualified Up to a Maximum of 32 V Operation

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C-02, STYLE 1

NI-880S

MRF5S19150SR3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

357

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

CW Operation

- 65 to +150

200

°C

stg

100

Watts

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value (1,2)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW

Case Temperature 80°C, 32 W CW

°C/W

0.49

0.53

(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to

access the MTTF calculators by product.

(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 1

MOTOROLA RF DEVICE DATA

MRF5S19150R3 MRF5S19150SR3

 Motorola, Inc. 2004

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7...12

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与MRF5S19150S相关器件

型号	品牌	获取价格	描述	数据表
MRF5S19150SR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF5S21045	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S21045MBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S21045MR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S21045NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21045NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S21045NR1_09	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21090HR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21090HR3_06	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S21090HR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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