Datasheet > MRF5S21150HR3

MRF5S21150HR3

更新时间： 2024-11-14 03:59:15

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	386K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF5S21150HR3 数据手册

MRF5S21150H

Rev. 1, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF5S21150HR3

MRF5S21150HSR3

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

• Typical 2-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ= 1300 mA,

_out= 33 Watts Avg., Full Frequency Band, Channel Bandwidth =

2110-2170 MHz, 33 W AVG., 28 V

2 x W-CDMA

3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 12.5 dB

Efficiency — 25%

IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -39 dBc in 3.84 MHz Channel Bandwidth

LATERAL N-CHANNEL

RF POWER MOSFETs

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

CASE 465B-03, STYLE 1

NI-880

MRF5S21150HR3

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C-02, STYLE 1

NI-880S

MRF5S21150HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

380

2.2

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

CW Operation @ T = 25°C

Derate above 25°C

150

0.84

W/°C

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW

Case Temperature 75°C, 33 W CW

°C/W

0.46

0.47

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF5S21150HR3 MRF5S21150HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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与MRF5S21150HR3相关器件

型号	品牌	获取价格	描述	数据表
MRF5S21150HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21150R3	FREESCALE	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF5S21150R3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF5S21150S	FREESCALE	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF5S21150S	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF5S21150SR3	FREESCALE	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF5S21150SR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF5S4125NBR1	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S4125NR1	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S4140HR3	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs

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