Datasheet > MRF5S9100MR1

MRF5S9100MR1

更新时间： 2024-11-11 22:07:55

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管光电二极管放大器局域网
页数	文件大小	规格书
12页	441K
描述
N-Channel Enhancement-Mode Lateral MOSFETs

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MRF5S9100MR1 数据手册

Document Number: MRF5S9100

Rev. 3, 7/2005

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

MRF5S9100NR1

MRF5S9100NBR1

MRF5S9100MR1

MRF5S9100MBR1

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with

frequencies up to 1000 MHz. The high gain and broadband performance of

these devices make them ideal for large-signal, common-source amplifier

applications in 26 volt base station equipment.

• Typical Single-Carrier N-CDMA Performance @ 880 MHz, V_DD= 26 Volts,

I_DQ= 950 mA, P_out= 20 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

880 MHz, 20 W AVG., 26 V

SINGLE N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

Power Gain — 19.5 dB

Drain Efficiency — 28%

ACPR @ 750 kHz Offset — -46.8 dBc @ 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW

Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• N Suffix Indicates Lead-Free Terminations

• 200°C Capable Plastic Package

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

MRF5S9100NR1(MR1)

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1484-02, STYLE 1

TO-272 WB-4

PLASTIC

MRF5S9100NBR1(MBR1)

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

- 0.5, +68

- 0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

336

1.92

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 80°C, 20 W CW

0.52

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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与MRF5S9100MR1相关器件

型号	品牌	获取价格	描述	数据表
MRF5S9100NBR1	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S9100NR1	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S9101MBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S9101MBR1	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
MRF5S9101MR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S9101MR1	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA, PLASTIC, CASE 1486-03, 4 PIN
MRF5S9101NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S9101NBR1	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
MRF5S9101NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S9101NR1	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA, PLASTIC, CASE 1486-03, 4 PIN

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